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  v 500v Datasheet PDF File

For v 500v Found Datasheets File :: 8290    Search Time::2.516ms    
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    APT5030AVR

ADPOW[Advanced Power Technology]
Part No. APT5030AvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description POWER MOS v 500v 14.7A 0.300 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

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    APT5032CVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT5032CvR
OCR Text v (R) TO-254 TO-254 Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 14A 0.320 Ohm

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    APT5040CNR

ADPOW[Advanced Power Technology]
Part No. APT5040CNR
OCR Text ...2 SEC. PULSE TEST NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 2.0 vGS=10v 1.5 vGS=20v 1.0 8 4 TJ = +125C TJ = +25C 0 0 TJ = -55C 2 4 6 8 vGS, GATE-TO-SOURCE vOLTAGE (vOLTS) FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS 16 0.5 ...
Description POWER MOS Iv 500v 13.0A 0.400 Ohm
N - CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS

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    APT50M38JFLL

ADPOW[Advanced Power Technology]
Part No. APT50M38JFLL
OCR Text ... ns MAX UNIT Amps volts v/ns ns 91 364 1.3 5 300 600 (vGS = 0v, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.2 9.0 16 33 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Cha...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.39K  /  2 Page

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    APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL

ADPOW[Advanced Power Technology]
Part No. APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text ... ns MAX UNIT Amps volts v/ns ns 71 284 1.3 15 300 600 (vGS = 0v, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol RqJC RqJA Cha...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.44K  /  2 Page

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    APT50M50JVFR

ADPOW[Advanced Power Technology]
Part No. APT50M50JvFR
OCR Text v (R) FREDFET Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also ach...
Description POWER MOS v 500v 77A 0.050 Ohm
Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 73.13K  /  4 Page

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    APT50M50JVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50JvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 77A 0.050 Ohm

File Size 70.86K  /  4 Page

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    APT50M50L2FLL

ADPOW[Advanced Power Technology]
Part No. APT50M50L2FLL
OCR Text ... ns MAX UNIT Amps volts v/ns ns 89 356 1.3 15 300 600 (vGS = 0v, IS = -ID [Cont.]) dv/ dt Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 Tj = 125C Tj = 25C Tj = 125C C Amps THERMAL CHARACTERISTICS Symbol ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 52.74K  /  2 Page

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    APT50M50 APT50M50PVR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT50M50 APT50M50PvR
OCR Text v (R) Power MOS v(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS v(R) also achieves faster ...
Description Power MOS v is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS v是一个高电压N新一代通道增强型功率MOSFET
POWER MOS v 500v 74.5A 0.050 Ohm

File Size 35.96K  /  2 Page

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    APT50M60JN

ADPOW[Advanced Power Technology]
Part No. APT50M60JN
OCR Text ...<0.5 % DUTY CYCLE NORMALIZED TO v = 10v @ 0.5 I [Cont.] GS D 120 6v 80 5.5v 80 4.5v 4v 0 50 100 150 200 250 vDS, DRAIN-TO-SOURCE vOLTAGE (vOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS 0 100 TJ = -55C TJ = +25C TJ = +125C 5v 5v I...
Description POWER MOS Iv 500v 71A 0.060 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH vOLTAGE POWER MOSFETS

File Size 60.22K  /  4 Page

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