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				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHB100N03LT NXPSEMICONDUCTORS-PHB100N03LT
OCR Text	...ata Conditions Tj = 25 to 175 C tmb = 25 C; VGS = 5 V tmb = 25 C VGS = 10 V; ID = 25 A VGS = 5 V; ID = 25 A Typ - - - - 5.0 6.2 Max 25 75 125 175 5.8 7.5 Unit V A W C m m drain-source voltage (DC) drain current (DC) total power dissipation ...
Description	N-channel enhancement mode field-effect transistor 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	133.79K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors] http://
Part No.	PHD3055E
OCR Text	...) SYMBOL PARAMETER ID IDM PD PD/tmb VGS EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Single pulse avalanche energy Peak avalanche current Operating junction and ...
Description	PowerMOS transistor
File Size	71.82K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHD3055L
OCR Text	...) SYMBOL PARAMETER ID IDM PD PD/tmb VGS VGSM EAS IAS Tj, Tstg Continuous drain current Pulsed drain current Total dissipation Linear derating factor Gate-source voltage Non-repetitive gate-source voltage Single pulse avalanche energy Peak a...
Description	PowerMOS transistor Logic level FET 12 A, 60 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	50.72K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PBYR1045B PBYR1035 PBYR1035B PBYR1040B
OCR Text	...e temperature CONDITIONS PBYR10 tmb 113 C square wave; = 0.5; tmb 136 C square wave; = 0.5; tmb 136 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj ma...
Description	Rectifier diodes Schottky barrier
File Size	37.67K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHB11N06LT PHD11N06LT
OCR Text	...C Tj = 25 C to 175C; RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 55 55 13 11 7.6 44 36 175 UNIT V V V A A A W C 1 It is not possible to make contact to pin 2 of the SOT404 or SOT428 package September 1998 1 Re...
Description	TrenchMOS transistor Logic level FET
File Size	75.64K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHP11N06LT PHB11N06LT PHD11N06LT PHB11N06LT118
OCR Text	... C to 175C; RGS = 20 k Tj 150C tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 55 55 15 20 10.3 7.3 41 33 175 UNIT V V V V A A A W C 1 It is not possible to make connection to pin:2 of the SOT404 or SOT428 packages. August...
Description	10.3 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3 N-channel TrenchMOS TM transistor Logic level FET N-channel TrenchMOS transistor Logic level FET
File Size	108.60K / 12 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHP125N06LT PHB125N06LT PHP125N06L
OCR Text	...C Tj = 25 C to 175C; RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 55 55 13 75 75 240 250 175 UNIT V V V A A A W C March 1998 1 Rev 1.400 Philips Semiconductors Product specification TrenchMOSTM t...
Description	TrenchMOS transistor Logic level FET(TrenchMOS 晶体管标准电平场效应 TrenchMOS场效应晶体管逻辑电平TrenchMOS晶体管标准电平场效应管）
File Size	71.12K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHP125N06T
OCR Text	...mperature CONDITIONS RGS = 20 k tmb = 25 C tmb = 100 C tmb = 25 C tmb = 25 C MIN. - 55 MAX. 55 55 20 75 75 240 250 175 UNIT V V V A A A W C ESD LIMITING VALUE SYMBOL VC PARAMETER Electrostatic discharge capacitor voltage, all pins CONDI...
Description	TrenchMOS transistor Standard level FET
File Size	63.03K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHT11N06T PHT11N06
OCR Text	...nce DYNAMIC CHARACTERISTICS tmb = 25C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capac...
Description	TrenchMOS transistor Standard level FET 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET TrenchMOS transistor Logic level FET
File Size	74.68K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	PHT11N06 PHT11N06LT
OCR Text	...nce DYNAMIC CHARACTERISTICS tmb = 25C unless otherwise specified SYMBOL gfs Qg(tot) Qgs Qgd Ciss Coss Crss td on tr td off tf PARAMETER Forward transconductance Total gate charge Gate-source charge Gate-drain (Miller) charge Input capac...
Description	TrenchMOS transistor Logic level FET 4.9 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	68.52K / 9 Page	View it Online	Download Datasheet

For tmb Found Datasheets File :: 2486 Search Time::1.359ms
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