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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BGY204
OCR Text	...icated as follows (see Fig.16): t = 350 s at 100 C t = 300 s at 125 C t = 200 s at 150 C t = 100 s at 175 C t = 50 s at 200 C t = 5 s at 250...module PACKAGE OUTLINE BGY204 handbook, full pagewidth 25.0 24.6 22.1 21.7 3.0 2.6 1.65...
Description	UHF amplifier module
File Size	57.38K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BGY205
OCR Text	...icated as follows (see Fig.18): t = 350 s at 100 C t = 300 s at 125 C t = 200 s at 150 C t = 100 s at 175 C t = 50 s at 200 C t = 5 s at 250...module PACKAGE OUTLINE BGY205 handbook, full pagewidth 25.0 24.6 22.1 21.7 3.0 2.6 1.65...
Description	UHF amplifier module
File Size	60.56K / 11 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BGY206
OCR Text	...MGM159 handbook, halfpage T (C) 200 100 t (min) 5 Fig.16 Recommended reflow temperature profile. 1998 May 08 9 Ph...module BGY206 handbook, full pagewidth 17.7 12.5 12 6 4 8.75 footprint metallization sol...
Description	UHF amplifier module
File Size	84.75K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BGY212 BGY212A
OCR Text	... = 0 dBm; Tmb = 25 C; = 1 : 8; t p = 575 s. 0 2.5 2 3 4 VS (V) ZS = ZL = 50 ; VC = 2.2 V; PD = 0 dBm; Tmb = 25 C; = 1 : 8; tp = 575 s....module BGY212A 4 VSWRIN 0 H2, H3 (dBc) -20 3 H2 -40 1710MHz H3 2 1785MHz -60...
Description	UHF amplifier module
File Size	130.20K / 11 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BSM75GD120DN2 075D12N2 C67070-A2516-A67
OCR Text	...p case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Mar-27-1996 BSM 75 GD 120 DN2 El...
Description	IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT From old datasheet system
File Size	185.11K / 9 Page	View it Online	Download Datasheet

				POWEREX[Powerex Power Semiconductors]
Part No.	CM100DY-28H
OCR Text	... 104 REVERSE RECOVERY TIME, t rr, (ns) 103 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 IC = 100A 16 VCC = 600V VCC = 800V...Module 100 Amperes/1400 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORM...
Description	Dual IGBTMOD 100 Amperes/1400 Volts
File Size	67.61K / 4 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	CM150DY-28H
OCR Text	... 104 REVERSE RECOVERY TIME, t rr, (ns) 104 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 16 SWITCHING TIME, (ns) td(off) ...Module 150 Amperes/1400 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORM...
Description	Dual IGBTMOD 150 Amperes/1400 Volts
File Size	69.57K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM200DY-28H
OCR Text	... - M6 THD (3 TYP.) R TAB#110 t=0.5 L E H M Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a r...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.59K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM300DY-28H
OCR Text	... TYP) N K K G H TAB #110, t = 0.5 Q N K E J N Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor havin...
Description	IGBT Modules:1400V HIGH POWER SWITCHING USE INSULATED TYPE
File Size	49.35K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	CM50DY-28H
OCR Text	... THD (3 TYP.) R R TAB#110 t=0.5 H L H P E G Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor h...
Description	IGBT Modules:1400V MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	48.00K / 4 Page	View it Online	Download Datasheet

For t-module Found Datasheets File :: 30998 Search Time::1.063ms
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