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    IRF3000

IRF[International Rectifier]
Part No. IRF3000
OCR Text ...acteristics Parameter EAS IAR Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 47 1.9 Units mJ A Diode Cha...Part Marking EXAMPLE: THIS IS AN IRF7101 (MOSFET) DAT E CODE (YWW) Y = LAST DIGIT OF T HE YEAR WW =...
Description 300V Single N-Channel HEXFET Power MOSFET in a SO-8 package
SMPS MOSFET

File Size 119.33K  /  8 Page

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    IRF3007

IRF[International Rectifier]
Part No. IRF3007
OCR Text ...g Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalan...part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation be...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 146.42K  /  9 Page

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text ...g Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Opera...Part Marking Information TO-220AB EXAMP : TH IS N 1 0 1 0 E X A M P L E :L ETH IS IS A N AIR F IR ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    IRF360 IRF360-15

IRF[International Rectifier]
Part No. IRF360 IRF360-15
OCR Text ...g Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last p...
Description Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V/ Rds(on)=0.20ohm/ Id=25A)
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.20ohm, Id=25A)
400V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

File Size 138.60K  /  7 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...ristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 17...Part Marking Information E X A M P L E : TH IS I S A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C OD...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ... Symbol EAS IAR Parameter Single Pulse Avalanche Energy Avalanche Current Typ. --- --- Max. 460 30 Units mJ A Diode Cha...Part Marking Information EXAMPLE: THIS IS AN IRF1010 LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...g Factor Gate-to-Source Voltage Single Pulse Avalanche Energyd Single Pulse Avalanche Energy Tested Value Avalanche CurrentA Repetitive Aval...part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation be...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...g Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt S O...part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation be...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...g Factor Gate-to-Source Voltage Single Pulse Avalanche EnergyR Avalanche CurrentQ Repetitive Avalanche EnergyW Peak Diode Recovery dv/dt S O...part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation be...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF530N

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. IRF530N
OCR Text ...0.5 0.2 0.1 0.05 0.1 0.02 single pulse P D tp D = tp/T T 1E-04 1E-03 1E-02 1E-01 1E+00 0.01 1E-06 1E-05 Pulse wid...part of the specification. (c) Philips Electronics N.V. 1999 All rights are reserved. Reproduction i...
Description N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
N-channel TrenchMOS TM transistor

File Size 95.87K  /  7 Page

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