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  rg-62 u Datasheet PDF File

For rg-62 u Found Datasheets File :: 3179    Search Time::1.25ms    
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    CPU165MF

IRF[International Rectifier]
Part No. CPu165MF
OCR Text ... 39A, VCC = 480V 540 VGE = 15V, RG = 5.0 360 Energy losses include "tail" and -- diode reverse recovery -- mJ See Fig. 9, 10, 11, 18 5.4 -- TJ = 150C, See Fig. 9, 10, 11, 18 -- ns IC = 39A, VCC = 480V -- VGE = 15V, RG = 5.0 -- Energy losses...
Description IGBT SIP MODuLE Fast IGBT

File Size 398.34K  /  8 Page

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    GA250TS60U

IRF[International Rectifier]
Part No. GA250TS60u
OCR Text ... 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA...
Description 600V ultraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
HALF-BRIDGE IGBT INT-A-PAK

File Size 226.75K  /  10 Page

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    HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A

Fairchild Semiconductor
Part No. HGTP12N60B3D HGT1S12N60B3DS HGTG12N60B3D HGT1S12N60B3DS9A
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...62 304 250 22 23 280 112 500 660 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 295 175 525 800 uNITS V A...
Description 27A, 600V, uFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
27A/ 600V/ uFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 12A I(C) | TO-263AB

File Size 202.82K  /  7 Page

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    HGTP12N60B3 HGT1S12N60B3S FN4410

INTERSIL[Intersil Corporation]
Part No. HGTP12N60B3 HGT1S12N60B3S FN4410
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...62 150 304 250 MAX 250 2.0 2.1 2.5 6.0 250 60 78 350 350 uNITS V V A mA V V V nA A V nC nC ns ns ns ...
Description From old datasheet system
27A, 600V, uFS Series N-Channel IGBTs
27A/ 600V/ uFS Series N-Channel IGBTs

File Size 111.87K  /  7 Page

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    HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...62 28 20 270 210 380 900 1.7 55 71 400 275 2.1 V nC nC ns ns ns ns J J V Current Turn-On De...
Description 24A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB

File Size 151.95K  /  8 Page

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    HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S

Harris, Corp.
HARRIS[Harris Corporation]
Fairchild Semiconductor
Part No. HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S
OCR Text ... VCE = VGE VGE = 20V TJ = 150oC RG = 25 VGE = 15V L = 100H Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Switching SOA V...62 14 16 270 210 380 900 - 55 71 400 275 1.2 V nC nC ns ns ns ns J J oC/W Current Turn-On ...
Description 24A, 600V, uFS Series N-Channel IGBTs 4A00V的,的ufs系列N沟道IGBT
24A/ 600V/ uFS Series N-Channel IGBTs

File Size 131.11K  /  6 Page

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    HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. HGTP15N40C1 HGTP15N40E1 HGTP15N50C1 HGTP15N50E1 HGTH20N40C1 HGTH20N40E1 HGTH20N50C1 HGTH20N50E1
OCR Text ... = 25H, TJ = +100oC, VGE = 10V, RG = 25 VGEP QG(ON) tD(ON)I tRI tD(OFF)I tFI IC = 10A, VCE = 10V IC = 10A, VCE = 10V IC = 20A, VCE(CLP) = 30...62 HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 Typical Performance Curves 40 VG...
Description 15A, 20A, 400V and 500V N-Channel IGBTs 15 A, 500 V, N-CHANNEL IGBT, TO-220AB
15A 20A 400V and 500V N-Channel IGBTs
15A/ 20A/ 400V and 500V N-Channel IGBTs

File Size 35.19K  /  5 Page

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    IRFU2405 IRFR2405

IRF[International Rectifier]
Part No. IRFu2405 IRFR2405
OCR Text ... 28V 130 --- ID = 34A ns 55 --- RG = 6.8 78 --- VGS = 10V D Between lead, 4.5 --- 6mm (0.25in.) nH G from package 7.5 --- and center of die...62 93 ns TJ = 25C, IF = 34A --- 170 260 nC di/dt = 100A/s Intrinsic turn-on time is negligible (tur...
Description Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A)
Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=56A?)

File Size 125.44K  /  10 Page

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    IRFU3505 IRFR3505

IRF[International Rectifier]
Part No. IRFu3505 IRFR3505
OCR Text ...- VDD = 28V --- ID = 30A ns --- RG = 6.8 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS ...
Description AuTOMOTIVE MOSFET

File Size 580.87K  /  11 Page

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    IRFU3704 IRFR3704

IRF[International Rectifier]
Part No. IRFu3704 IRFR3704
OCR Text ...VDD = 10V --- ID = 28.4A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 10V --- pF = 1.0MHz Avalanche Characteristics Symbol E...62 75 V ns nC ns nC VSD trr Qrr trr Qrr Conditions D MOSFET symbol showing the G integral reve...
Description Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A?
Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.5mohm, Id=75A?)

File Size 113.36K  /  9 Page

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For rg-62 u Found Datasheets File :: 3179    Search Time::1.25ms    
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