rg-210 u pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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rg-210 u Datasheet PDF File

For rg-210 u Found Datasheets File :: 1422 Search Time::1.282ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQP13N50C FQPF13N50C
OCR Text	..., 5) VDD = 250 V, ID = 13 A, RG = 25 (Note 4, 5) -------- 25 100 130 100 43 7.5 18.5 60 210 270 210 56 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuou...
Description	500V N-Channel Advance Q-FET C-Series 500V N-Channel MOSFET
File Size	870.35K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP048N
OCR Text	... VDD = 28V --- I D = 32A ns --- RG = 5.1 --- RD = 0.85, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of d...210 1.3 140 540 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diod...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.016ohm, Id=64A)
File Size	107.68K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLIZ44NPBF
OCR Text	...nd 13 VDD = 28V ID = 25A ns RG = 3.4, VGS = 5.0V RD = 1.1, See Fig. 10 Between lead, 4.5 6mm (0.25in.) nH G from package 7.5 and c...210 320 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) No...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	250.53K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLZ44N IRLZ44NPBF
OCR Text	... VDD = 28V --- I D = 25A ns --- RG = 3.4, VGS = 5.0V --- RD = 1.1, See Fig. 10 Between lead, --- 4.5 --- 6mm (0.25in.) nH from package --- ...210 320 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) D...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package HEXFET? Power MOSFET
File Size	98.43K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLZ44NL IRLZ44NS
OCR Text	...5V, starting TJ = 25C, L =470H RG = 25, IAS = 25A. (See Figure 12) Pulse width 300s; duty cycle 2%. uses IRLZ44N data and test conditions ** When mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and s...
Description	Power MOSFET(Vdss=55V, Rds(on)=0.022ohm, Id=47A) HEXFET? Power MOSFET
File Size	174.53K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	SSM6J23FE
OCR Text	..., ID = -0.6A VGS = 0~-2.5 V, RG = 4.7 Note2: Pulse test Switching Time Test Circuit (a) Test Circuit 0 -2.5 V 10 s VDD = -10 V RG = 4.7 < D.u. = 1% VIN: tr, tf < 5 ns Common Source Ta = 25C ID (b) VIN out 0V 10% 90% ...
Description	High Current Switching Applications
File Size	283.68K / 6 Page	View it Online	Download Datasheet

				http:// Fairchild Semiconductor
Part No.	FCH47N60F
OCR Text	..., VGS = 0V VDD = 300V, ID = 47A RG = 25 Switching Characteristics --------- VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current...
Description	600V N-Channel MOSFET
File Size	937.59K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FCH47N60F0605 FCH47N60F
OCR Text	..., VGS = 0V VDD = 300V, ID = 47A RG = 25 Switching Characteristics --------- VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current...
Description	600V N-Channel MOSFET
File Size	922.92K / 8 Page	View it Online	Download Datasheet

				Linear
Part No.	LT6011
OCR Text	...lew Rate AV = -10, RF = 50k, RG = 5k TA = 0C to 70C TA = -40C to 85C f = 10kHz q q q GBW ts tr, tf VOS Gain Bandwidth Product Se...210 q q A A A 6011f 3 LT6011 ELECTRICAL CHARACTERISTICS SYMBOL VOS PARAMETER Inpu...
Description	Dual 135礎, 14nV/rtHz, Rail-to-Rail Output Precision Op Amp
File Size	236.29K / 12 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FCH47N6007 FCA47N60F109
OCR Text	..., VGS = 0V VDD = 300V, ID = 47A RG = 25 Switching Characteristics ----- VDS = 480V, ID = 47A VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Max...
Description	600V N-Channel MOSFET
File Size	955.72K / 10 Page	View it Online	Download Datasheet

For rg-210 u Found Datasheets File :: 1422 Search Time::1.282ms
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