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rg-195 u Datasheet PDF File

For rg-195 u Found Datasheets File :: 625 Search Time::1.875ms
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				http:// FAIRCHILD[Fairchild Semiconductor]
Part No.	IRFS654 IRFS654B IRF654B IRF654 IRF654BFP001
OCR Text	..., 5) VDD = 125 V, ID = 25 A, RG = 25 (Note 4, 5) -------- 35 195 300 180 95 12 43 80 400 610 370 123 --- ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous ...
Description	250V N-Channel MOSFET 250V N-Channel B-FET / Substitute of IRF654A
File Size	865.25K / 10 Page	View it Online	Download Datasheet

				ETC[ETC] IXYS[IXYS Corporation]
Part No.	IXFN180N10
OCR Text	...t 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C Maximum Ratings 100 100 20 30 180 100 720 180 60 3 5 600 -55 ... +150 150 -55 ... +150 3...195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFET Single MOSFET Die
File Size	83.10K / 4 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STP8NS25FP STP8NS25
OCR Text	...onditions VDD = 125 V, ID = 4 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 8 A, VGS = 10V Min. Typ. 13 18 37 5.2 14.8...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0...
Description	N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAYMOSFET N沟道250V - 0.38ohm - 8A条TO-220/TO-220FP⑩MOSFET的网格密 N-CHANNEL 250V 0.38 OHM 8A TO-220/TO-220FP MESH OVERLAY MOSFET N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY⑩ MOSFET N-CHANNEL 250V - 0.38ohm - 8A TO-220/TO-220FP MESH OVERLAY MOSFET
File Size	327.79K / 9 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	IRF630M IRF630MFP
OCR Text	...ditions VDD = 100 V, ID = 4.5 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 160V, ID = 9 A, VGS = 10V Min. Typ. 10 15 31 7.5 9 Ma...195 0.094 0.393 0.630 1.204 0.417 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.0...
Description	N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET N-CHANNEL 200V - 0.35W - 9A TO-220/TO-220FP MESH OVERLAY MOSFET N-CHANNEL 200V 0.35 OHM 9A TO-220/TO-220FP MESH OVERLAY MOSFET
File Size	342.22K / 9 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFN150N10 IXFK100N10 IXFK150N10
OCR Text	... 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C Maximum Ratings IXFK IXFN 100 100 20 30 100 76 560 75 30 5 500 100 100 20 30 150 560 7...195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	114.74K / 4 Page	View it Online	Download Datasheet

				IXYS[IXYS Corporation]
Part No.	IXFN150N15
OCR Text	... 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C Maximum Ratings 150 150 20 30 150 100 600 150 60 3 5 600 -55 ... +150 150 -55 ... +150 ...195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033...
Description	Discrete MOSFETs: HiPerFET Power MOSFETS
File Size	69.31K / 2 Page	View it Online	Download Datasheet

				Intersil, Corp. INTERSIL[Intersil Corporation]
Part No.	HGTG20N120C3D G20N120
OCR Text	...VCE = VGE VGE = 20V TJ = 150oC, RG = 3, VGE = 15V L = 100H, Gate to Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = I...195 0.260 0.105 0.640 0.155 0.144 0.220 0.205 0.270 5.56 TYP 11.12 BSC 2.29 15.75 3.69 3.51 5.34 ...
Description	45A, 1200V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 45 A, 1200 V, N-CHANNEL IGBT, TO-247 45A/ 1200V/ uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	97.30K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG20N120CN FN4533 G20N120
OCR Text	... 3. VCE(PK) = 960V, TJ = 125oC, RG = 3. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS ICES TEST CONDITIONS IC = 250A, VGE = 0V IC = 10mA, VGE = 0V VCE = BVCES TC = 25oC TC = 125oC TC = 1...
Description	63A/ 1200V/ NPT Series N-Channel IGBT 63A, 1200V, NPT Series N-Channel IGBT From old datasheet system
File Size	82.71K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTG20N120 HGTG20N120E2 G20N120
OCR Text	...90, VGE = 15V, VCE = 0.8 BVCES, RG = 25, TJ = +125oC +125oC MIN 1200 TYP MAX uNIT V A mA V V V V V 3.0 2.9 3.0 3.1 3.3 4.5 250 1.0 3.5 3.6 3.8 4.0 6.0 250 150 200 620 1000 520 1000 0.83 TC = +25oC Gate-Emitter Leakage Current...
Description	34A/ 1200V N-Channel IGBT 34A, 1200V N-Channel IGBT
File Size	167.11K / 5 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF5M3710
OCR Text	...VDD = 50V, ID = 28A, VGS = 10V, RG = 2.5 IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-So...195] 1 2 3 20.32 [.800] 20.07 [.790] 13.84 [.545] 13.59 [.535] 22.73 [.895] 21.21 [.835] ...
Description	POWER MOSFET N-CHANNEL(Vdss=100V, Rds(on)=0.03ohm, Id=35A) 功率MOSFET N沟道（减振钢板基本\u003d 100V的，的Rds（on）\u003d 0.03ohm，身份证\u003d 35A条）
File Size	112.29K / 7 Page	View it Online	Download Datasheet

For rg-195 u Found Datasheets File :: 625 Search Time::1.875ms
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