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rg-140 u Datasheet PDF File

For rg-140 u Found Datasheets File :: 6487 Search Time::1.969ms
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				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S7N60B3DS HGTP7N60B3D HGT1S7N60B3DS9A
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 50 . Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES...140 120 RG = 50, L = 2mH, V CE = 480V 50 trI , RISE TIME (ns) TJ = 150oC, VGE = 10V TJ =...
Description	14A/ 600V/ uFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode 14 A, 600 V, uFS N-Channel IGBT with Anti-Parallel Hyperfast Diode 14A, 600V, uFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode TRANSISTOR \| IGBT \| N-CHAN \| 600V V(BR)CES \| 7A I(C) \| TO-263AB
File Size	158.34K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S7N60C3D HGT1S7N60C3DS HGTP7N60C3D
OCR Text	... VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH Gate-Emitter Plateau Voltage On-State Gate Charge VGEP QG(ON) IC = IC110, VCE = 0....140 165 600 1.9 25 18 30 38 400 275 2.5 35 30 2.1 2.0 V nC nC ns ns ns ns J J V ns ns oC/W oC/W ...
Description	3.3V 72-mc CPLD 14A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 14A/ 600V/ uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
File Size	197.06K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	HGTD7N60C3S HGTP7N60C3 FN4141
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 50. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...140 165 600 MAX 400 275 2.1 uNITS ns ns ns ns J J oC/W Typical Performance Curves ICE, COLLECTO...
Description	3.3V 72-mc CPLD 14A, 600V, uFS Series N-Channel IGBTs 14A 600V uFS Series N-Channel IGBTs From old datasheet system
File Size	143.46K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor Corporation HARRIS[Harris Corporation] FAIRCHILD[Fairchild Semiconductor]
Part No.	HGTD7N60C3 HGTP7N60C3 HGTD7N60C3S
OCR Text	... VCE = VGE VGE = 25V TJ = 150oC RG = 50 VGE = 15V L = 1mH VCE(PK) = 480V VCE(PK) = 600V TC = 25oC TC = 150oC TC = 25oC TC = 150oC TC = 25oC ...140 165 600 - 30 38 400 275 2.1 V nC nC ns ns ns ns J J oC/W Current Turn-On Delay Time Cu...
Description	3.3V 72-mc CPLD 14A 600V uFS Series N-Channel IGBTs 14A, 600V, uFS Series N-Channel IGBTs 14A/ 600V/ uFS Series N-Channel IGBTs
File Size	153.41K / 6 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7301 IRF7301TR
OCR Text	... VDD = 10V --- ID = 2.6A ns --- RG = 6.0 --- RD = 3.8, See Fig. 10 D --- nH --- --- --- --- Between lead tip and center of die conta...140 160 A V G S , Ga te-to-S o urce V oltage (V ) T J , Junction Temperature (C ) Fig 3....
Description	FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.86K / 9 Page	View it Online	Download Datasheet

				International Rectifier http://
Part No.	IRF7303 IRF7303TR
OCR Text	...3 5.0 VDS 4.0 RD VGS RG D.u.T. + I D , Drain Current (A) - VDD 3.0 10V Pulse Width 1 s Duty Factor 0.1 % 2.0 Fig 10a. Switching Time Test Circuit 1.0 VDS 90% 0.0 25 50 75 100 125 150 T C , Case ...
Description	Generation V Technology 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=30V, Rds(on)=0.050ohm)
File Size	107.34K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF7306 IRF7306TR IRF7306TRPBF
OCR Text	...5V 17 --- I D = -1.8A ns 25 --- RG = 6.0 18 --- RD = 8.2, See Fig. 10 D 4.0 6.0 440 200 93 --- nH --- --- --- --- Between lead ti...140 160 A -V G S , G ate-to-S o urce V oltage ( V ) T J , Junction T emperature (C) Fig ...
Description	Generation V Technology -30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
File Size	109.78K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF7307 IRF7307TR
OCR Text	...N-Channel VDD = 10V, ID = 2.6A, RG = 6.0, RD = 3.8 ns P-Channel VDD = -10V, ID = -2.2A, RG = 6.0, RD = 4.5 nH Between lead tip and center of...140 160 V GS , G a te - to -S o ur c e V olta ge (V ) TJ , J unction Tem perature (C ) Fig ...
Description	20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package
File Size	190.19K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF730APBF
OCR Text	...VDD = 200V --- ID = 3.5A ns --- RG = 12 --- R D = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS ...140 160 TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Norma...
Description	SMPS MOSFET
File Size	180.64K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF730A IRF730 IRF730APBF
OCR Text	...VDD = 200V --- ID = 3.5A ns --- RG = 12 --- RD = 57,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS =...140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Tra...
Description	400V Single N-Channel HEXFET Power MOSFET in a TO-220AB package SMPS MOSFET
File Size	100.63K / 8 Page	View it Online	Download Datasheet

For rg-140 u Found Datasheets File :: 6487 Search Time::1.969ms
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