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http:// INTERSIL[Intersil Corporation]
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| Part No. |
EL5235IS-T7 EL5134_06 EL5134IS EL5134IS-T13 EL5134IS-T7 EL5134ISZ EL5134ISZ-T13 EL5134ISZ-T7 EL5135 EL5135IW-T7 EL5135IW-T7A EL5135IWZ-T7 EL5135IWZ-T7A EL5234 EL5234IY EL5234IY-T13 EL5234IY-T7 EL5235 EL5235IS EL5235IS-T13
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| OCR Text |
...
VS+ = +5V, VS- = -5V, Av=+5, rf = 100, rg = 25, RL = 500,TA = 25C, unless otherwise specified. CONDITIONS MIN -1 EL5234 TYP 0.2 0.3 -0.8 2.5 -0.7 3.7 0.3 -3 75 80 3 5 85 108 3.3 16 1 5.6 RL = 1k to GND RL = 1k, rf = 900, rg = 100 RL = 15... |
| Description |
650MHz, Gain of 5, Low Noise Amplifiers
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| File Size |
1,413.40K /
12 Page |
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Zarlink Semiconductor Inc.
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| Part No. |
ZL40162/DCB ZL40162/DCA
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| OCR Text |
...ample 100r rg rf1 rf2 12r5 12r5 rf rg
data sheet zl40162 3 zarlink semiconductor inc. absolute maximum ratings - (see note 1) note 1: absolute maximum ratings indicate limits beyond which damage to the device may occur. operating ratings... |
| Description |
High Output Current High Speed Dual Operational Amplifier
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| File Size |
529.65K /
32 Page |
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Duracell California Eastern Laboratories
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| Part No. |
NE6510179A-A NE6510179A-T1
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| OCR Text |
...amples per wafer are tested for rf performance. wafer rejection criteria for stand ard devices is 1 reject for several samples. note: u...rg = 100 ? i dsq = 200 ma (rf off) 2 t i 9 x source gate drain 4.2 max 5.7 max 4.4 max 0.8 ? 0.15... |
| Description |
NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
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| File Size |
251.06K /
10 Page |
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it Online |
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