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Atmel Corp.
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| Part No. |
AT49F004 AT49F004T
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| OCR Text |
...puts to avoid bus con- tention. reprogramming the at49f004(t)/4096a(t) is performed by first erasing a 4-megabit (512k x 8/ 256k x 16) flash memory at 4 9 f 0 0 4 at49f004t at49f4096a at49f4096at preliminary rev. 1167aC09/98 pin configurati... |
| Description |
5-volt, 4-Megabit Flash Memory(5V 4M位闪速存储器)
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| File Size |
175.00K /
16 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN1174
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| OCR Text |
...cution from one memory while reprogramming the other. * 2 kbytes scratchpad sram (8 kbytes in future pin-compatible upgrade). * two flash-based plds with 16 output micro cells and 24 input micro cells. * 27 individually configurable ... |
| Description |
USE THE PSD813F TO MINIMIZE SIGNAL CONDITIONING SYSTEM HARDWARE
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| File Size |
157.41K /
21 Page |
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Pyramid Semiconductor, Corp.
PYRAMID SEMICONDUCTOR CORP
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| Part No. |
PY291A-50PI PY291A-25PI PY291A-35DI
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| OCR Text |
...at ures epr om technology for reprogramming high speed C 20/25/35/50 ns (commercial) C 25/35/50 ns (industrial) C 35/50 ns (military) low power operation: 660 mw single 5v10% power supply windowed devices for reprogrammin... |
| Description |
2K X 8 OTPROM, 50 ns, PDIP24 0.300 INCH, PLASTIC, DIP-24
2K X 8 OTPROM, 25 ns, PDIP24 0.300 INCH, PLASTIC, DIP-24
2K X 8 OTPROM, 35 ns, CDIP24
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| File Size |
457.12K /
9 Page |
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it Online |
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Atmel Corp.
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| Part No. |
AT49BV004
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| OCR Text |
...inputs to avoid bus contention. reprogramming the at49bv004(t)/4096a(t) is performed by first erasing a block of data and then programming on a byte-by-byte or word-by-word basis. 4-megabit (512k x 8/ 256k x 16) flash memory at49bv004 at49b... |
| Description |
4-Megabit3-volt Flash Memory(4M3V闪速存储器)
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| File Size |
174.26K /
16 Page |
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it Online |
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Atmel Corp.
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| Part No. |
AT45DB161
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| OCR Text |
...allows receiving of data while reprogramming of nonvolatile memory internal program and control timer fast page program time ? 7 ms typical 120 s typical page to buffer transfer time low power dissipation ? 4 ma active read current... |
| Description |
16-megabit 2.7-volt Only Serial DataFlash(16M2.7V串行数据闪速存储器)
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| File Size |
183.45K /
21 Page |
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it Online |
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Atmel Corp.
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| Part No. |
AT45D161
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| OCR Text |
...allows receiving of data while reprogramming of nonvolatile memory internal program and control timer fast page program time ? 7 ms typical 120 s typical page to buffer transfer time low power dissipation ? 15 ma active read curren... |
| Description |
16-megabit 5-volt Only Serial DataFlash(16M5V串行数据闪速存储器)
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| File Size |
177.61K /
21 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN1473
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| OCR Text |
... be considered (see example 2). reprogramming once a buffer (1 to 4 pages) has been programmed it cannot be reprogrammed until the block containing that buffer has been erased (regardless of the current data and the data to be programmed). ... |
| Description |
HOW TO USE THE WRITE TO BUFFER FEATURE OF THE M58LW064 FAMILY OF FLASH MEMORIES
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| File Size |
79.82K /
13 Page |
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it Online |
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