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  pulse.8a Datasheet PDF File

For pulse.8a Found Datasheets File :: 8664    Search Time::2.078ms    
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    8TQ100GSPBF 8TQ080GSPBF 8TQ100GSTRLPBF 8TQ100GSTRRPBF 8TQ080GSTRLPBF 8TQ080GSTRRPBF

Vishay Siliconix
Part No. 8TQ100GSPBF 8TQ080GSPBF 8TQ100GSTRLPBF 8TQ100GSTRRPBF 8TQ080GSTRLPBF 8TQ080GSTRRPBF
OCR Text ... waveform 5 s sine or 3 s rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR Following any rated load condition and with rated VRRM app...8A Maximum forward voltage drop See fig. 1 VFM (1) 16 A 8A 16 A Maximum reverse leakage current See ...
Description Schottky Rectifier, 8 A

File Size 107.52K  /  6 Page

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    8TT100

Vishay Siliconix
Part No. 8TT100
OCR Text ... waveform 5 s sine or 3 s rect. pulse IFSM 10 ms sine or 6 ms rect. pulse EAS IAR TJ = 25 C, IAS = 1.5 A, L = 60 mH Limited by frequency of ...8A Forward voltage drop VFM (1) 16 A 8A 16 A Reverse leakage current Junction capacitance Series ind...
Description High Performance Schottky Generation 5.0, 8 A

File Size 107.46K  /  7 Page

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    FAN400A FAN400ANY FAN400ATY

Fairchild Semiconductor
Part No. FAN400A FAN400ANY FAN400ATY
OCR Text ...ides many protection functions. Pulse-by-pulse current limiting ensures constant output current, even if a short circuit occurs. The interna...8A. This allows a high-resistance, low-wattage startup resistor to supply the controller's startup p...
Description Low-Power Green-Mode PWM Flyback Power Controller without Secondary Feedback

File Size 557.90K  /  15 Page

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    SGD04N60

Infineon Technologies AG
Part No. SGD04N60
OCR Text ... 20 v avalanche energy, single pulse i c = 4 a, v cc = 50 v, r ge = 25 ? , start at t j = 25 c e as 25 mj short circuit withstand...8a 10a 12a t c , case temperature t c , case temperature figure 3. power dissipation as a function...
Description Fast S-IGBT in NPT-technology( NPT 技术中的快S-IGBT) 9.4 A, 600 V, N-CHANNEL IGBT, TO-252AA

File Size 271.27K  /  12 Page

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    P3503EVG

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ETC
Part No. P3503EVG
OCR Text ... TYPICAL MAXIMUM 25 50 Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, U...8A VDS = -10V, ID = -6A -30 44 28 7 60 35 S -30 -0.8 -1.5 -2.5 100 -1 -10 A m[ nA A V LIMITS UNIT MI...
Description P-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 137.40K  /  5 Page

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    IRF7306 IRF7306TR IRF7306TRPBF

International Rectifier
Part No. IRF7306 IRF7306TR IRF7306TRPBF
OCR Text ... Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. ISD -1.8A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C Surface mounted on FR-4 board, t 10sec. ...
Description Generation V Technology
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package

File Size 109.78K  /  9 Page

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    IRF7307 IRF7307TR

IRF[International Rectifier]
Part No. IRF7307 IRF7307TR
OCR Text ...= 25C VGS dv/dt TJ,TSTG 10 Sec. Pulse Drain Current, VGS @ 4.5V Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V ...8A VDS = VGS, ID = 250A VDS = VGS, ID = -250A VDS = 15V, ID = 2.6A VDS = -15V, ID = -2.2A VDS = 1...
Description 20V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 190.19K  /  10 Page

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    IRF7309 IRF7309TR IRF7309PBF

International Rectifier
Part No. IRF7309 IRF7309TR IRF7309PBF
OCR Text ... 25C VGS dv/dt TJ, TSTG 10 Sec. Pulse Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulse...8A VGS = -4.5V, ID = -1.5A VDS = VGS, ID = 250A V VDS = VGS, ID = -250A VDS = 15V, ID = 2.4A S VDS =...
Description 30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 161.00K  /  8 Page

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    FK16UM-6

Renesas Electronics Corporation
Part No. FK16UM-6
OCR Text ...s 100s 1ms 10ms TC = 25C Single Pulse DC 160 120 80 40 0 0 50 100 150 200 10-1 100 2 3 5 7 101 2 3 5 7 102 ...8A 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8...
Description MITSUBISHI Nch POWER MOSFET

File Size 96.73K  /  6 Page

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    IRF7313 IRF7313TR

IRF[International Rectifier]
Part No. IRF7313 IRF7313TR
OCR Text ...er Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction an...8A 0.046 V GS = 4.5V, ID = 4.7A V V DS = V GS, ID = 250A S V DS = 15V, ID = 5.8A 1.0 V DS = 24V...
Description 30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 542.53K  /  7 Page

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For pulse.8a Found Datasheets File :: 8664    Search Time::2.078ms    
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