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    AM29LV642DU90RPAI AM29LV642DU12RPAE AM29LV642DU12RPAI

Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
Part No. AM29LV642DU90RPAI AM29LV642DU12RPAE AM29LV642DU12RPAI
OCR Text ...5. the device is designed to be pro- grammed in-system with the standard system 3.0 volt v cc supply. a 12.0 volt v pp is not required for...electron injection. am29lv642d 3 preliminary table of contents distinctive characteristics . . . ...
Description 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control
PC Board Fuse; Current Rating:400mA-10A; Voltage Rating:250V; Fuse Terminals:Radial Lead; Fuse Size/Group:Subminiature; Fuse Type:Fast Acting; Interrupting Current Max:50A; Packaging:Bulk
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control

File Size 483.00K  /  53 Page

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    Spansion, Inc.
SPANSION LLC
Part No. AM29F010B-45JI AM29F010B-45JE AM29F010B-45EF
OCR Text ...manufactured using amd?s 0.32 m pro - cess technology, and offers all the features and benefits of the am29f010 and am29f010a. the standar...electron injection. november 12, 2009 am29f010b_00_c10 3 data sheet table of contents general ...
Description 1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory 128K X 8 FLASH 5V PROM, 45 ns, PQCC32

File Size 479.99K  /  33 Page

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    AM75PDL191CHHA

SPANSION
Part No. AM75PDL191CHHA
OCR Text ...uiring only two write cycles to pro- gram data instead of four. device erasure occurs by execut- ing the erase command sequence. the host s...electron injection. chip enable configuration ce#f1 control ce#f2 control bank 1a 48 mbit (32 kw x 9...
Description (AM75PDL191CHHA / AM75PDL193CHHA) Simultaneous Read/Write Flash Memory

File Size 1,194.71K  /  129 Page

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    Advanced Micro Devices, Inc.
Part No. AM29LV320ML101RPCI AM29LV320MH112RPCI AM29LV320MH90RPCI
OCR Text ...dresses and data needed for the pro- gramming and erase operations. the sector erase architecture allows memory sec- tors to be erased and...electron injection. may 16, 2003 am29lv320mh/l 3 preliminary mirrorbit 32 mbit device family rela...
Description 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 2M X 16 FLASH 3V PROM, 100 ns, PBGA64
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 2M X 16 FLASH 3V PROM, 110 ns, PBGA64
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit3.0 Volt-only Uniform Sector Flash Memory with VersatileI/OControl 2M X 16 FLASH 3V PROM, 90 ns, PBGA64

File Size 582.00K  /  58 Page

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    AM29LV160M

AMD
Part No. AM29LV160M
OCR Text ...the array (if it is not already pro- grammed) before executing the erase operation. during erase, the device automatically times the erase p...electron injection. am29lv160m 3 table of contents product selector guide . . . . . . . . . . . ...
Description 16 Megabit 3 Volt-only Sector Erase Flash Memory

File Size 950.63K  /  51 Page

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    Advanced Micro Devices, Inc.
PROM
ADVANCED MICRO DEVICES INC
Part No. AM28F512A-120JEB AM28F512A-120PEB AM28F512A-120FEB AM28F512A-90FEB AM28F512A-90EEB AM28F512A-90PEB AM28F512A-120FCB AM28F512A-90JEB AM28F512A-120FI AM28F512A-150FI AM28F512A-200ECB AM28F512A-90ECB AM28F512A-70ECB AM28F512A-150ECB AM28F512A-150FIB AM28F512A-200FI AM28F512A-200FIB AM28F512A-90FI AM28F512A-70FI AM28F512A-90FIB AM28F512A-120EIB AM28F512A-200FC AM28F512A-150FCB AM28F512A-150JEB AM28F512A-200PI AM28F512A-150PI AM28F512A-70PC AM28F512A-200PCB AM28F512A-200EIB AM28F512A-70PCB AM28F512A-90JCB AM28F512A-90JIB AM28F512A-90PIB AM28F512A-150EE AM28F512A-200EEB AM28F512A-120JI AM28F512A-200JCB AM28F512A-200JIB AM28F512A-70JI AM28F512A-200PE AM28F512A-70JEB AM28F512A-120JIB
OCR Text ...etary non-epi process. latch-up pro- tection is provided for stresses up to 100 milliamps on address and data pins from C1 v to v cc +1 v. ...electron injection. comparing embedded algorithms with flasherase and flashrite algorithms am28f512a...
Description Divide-By-Twelve Decade Counter 14-PDIP 0 to 70
Divide-By-Twelve Decade Counter 14-SOIC 0 to 70
Quadruple 2-Input Positive-NAND Gates 14-SOIC -40 to 85
Quadruple 2-Input Positive-NAND Gates 14-SO -40 to 85
Quadruple 2-Input Positive-Nor Gates 14-TVSOP -40 to 85
4-Bit Binary Counters 14-SO 0 to 70
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
Quadruple 2-Input Positive-Nor Gates 14-TSSOP -40 to 85 2正输入或非门 14-TSSOP封装40℃到85
Hex Inverters 14-SSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-TVSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SO -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
4-Bit Binary Counters 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32
Quadruple 2-Input Positive-NAND Gates 14-TVSOP -40 to 85 64K X 8 FLASH 12V PROM, 200 ns, PDSO32
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 64K X 8 FLASH 12V PROM, 120 ns, PQCC32
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 512千比特(64亩8位)的CMOS 12.0伏,整体擦除闪存的嵌入式记忆算法
Hex Inverters 14-SOIC -40 to 85 64K X 8 FLASH 12V PROM, 90 ns, PDIP32
Quadruple 2-Input Positive-Nor Gates 14-SO -40 to 85 64K X 8 FLASH 12V PROM, 70 ns, PQCC32
Quadruple 2-Input Positive-Nor Gates 14-SOIC -40 to 85

File Size 237.11K  /  34 Page

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    Spansion, Inc.
SPANSION LLC
Part No. AM29LV320MB95REC AM29LV320MB95REI AM29LV320MT95REC AM29LV320MB95RED AM29LV320MT90REC
OCR Text ...dresses and data needed for the pro- gramming and erase operations. the sector erase architecture allows memory sec- tors to be erased and...electron injection. 26518c3 january 31, 2007 am29lv320mt/b 3 data sheet mirrorbit 32 mbit device f...
Description 32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit3.0 Volt-only Boot Sector Flash Memory 2M X 16 FLASH 3V PROM, 95 ns, PDSO48
32 Megabit (2 M x 16-Bit/4 M x 8-Bit) MirrorBit??3.0 Volt-only Boot Sector Flash Memory

File Size 878.04K  /  63 Page

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    NXP Semiconductors N.V.
Actel, Corp.
Advanced Micro Devices, Inc.
Part No. AM29LV400BB-120DTE1 AM29LV400BT-120DTE1 AM29LV400BT-120DPE1 AM29LV400BT-80DWE1 AM29LV400BT-90DWE1 AM29LV400BT-120DWE1 AM29LV400BB-80DTI1 AM29LV400BB-90DTI1 AM29LV400BB-120DTI1 AM29LV400BB-60RDTI1 AM29LV400BB-70DTI1 AM29LV400BB-70DTC1 AM29LV400BB-80DTC1 AM29LV400BB-120DTC1 AM29LV400BB-60RDTC1 AM29LV400BB-90DTC1 AM29LV400BT-90DTC1 AM29LV400BT-80DTE1 AM29LV400BT-60RDTI1 AM29LV400BB-90DWE1 AM29LV400BB-90DTE1 AM29LV400BT-80DPI1 AM29LV400BT-80DWI1 AM29LV400BT-80DWC1
OCR Text ...the array (if it is not already pro- grammed) before executing the erase operation. during erase, the device automatically times the erase p...electron injec- tion. electrical specifications refer to the am29lv400b data sheet, publication numb...
Description 32-Tap, Volatile MiniPot, Up/Down Interface, SC70
32-Tap, Volatile DPP with I2C/DEC, Up/Down Interface, MSOP
EEPROM EEPROM

File Size 82.89K  /  11 Page

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For pro-electron Found Datasheets File :: 362    Search Time::1.359ms    
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