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MICROSEMI CORP-LAWRENCE
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| Part No. |
DR5101
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| OCR Text |
...cally sealed glass package ? oxide and nitride passivation for long-term stable device performance ? metallurgically bonded double plug construction ? available for upscreen to mil-prf-19500 requirements ? pico amp low l... |
| Description |
SILICON, SIGNAL DIODE, DO-35
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| File Size |
91.48K /
2 Page |
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it Online |
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Bourns Electronic Solut...
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| Part No. |
CHF9838CNF500L
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| OCR Text |
...ioxide 12036-10-1 0.8 0.04 zinc oxide 1314-13-2 0.5 0.3 epoxy 25068-38-2 0.5 0.3 nickel 7440-02-0 1.2 0.06 3 chip ceramic 0.31 tin 7440-31-5 1.1 0.05 5.4 4 tab silver 0.06 silver 7440-22-4 100 1.1 1.1 5 tab protection epoxy 0.03 epoxy 25068... |
| Description |
RF Power Resistors
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| File Size |
73.11K /
1 Page |
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it Online |
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Bourns Electronic Solut...
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| Part No. |
CHF2010CNP500LXE
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| OCR Text |
...stor resistive film 0.0004 zinc oxide 1314-13-2 42 0.38 0.9 4 overcoat epoxy 0.00016 epoxy resin 25068-38-6 100 0.36 0.36 total weight 0.04462 this document was updated on: important remarks: 1. it is the responsibility of the user t... |
| Description |
RF Power Resistors
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| File Size |
56.98K /
1 Page |
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it Online |
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BOPOLARICS
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| Part No. |
BMT10B450-50
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| OCR Text |
...last resistors, gold metallized oxide isolation and nitrade passivations assure high performance and reliability. hermetic beo package with gold-tin seal is compat- ible with the most demanding high reliability industrial and military stand... |
| Description |
Silicon microwave power transistor.
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| File Size |
153.22K /
2 Page |
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it Online |
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BOPOLARICS
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| Part No. |
BMT1214B325-50
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| OCR Text |
...last resistors, gold metallized oxide isolation and nitrade passivations assure high performance and reliability. hermetic beo package with gold-tin seal is compat- ible with the most demanding high reliability industrial and military stand... |
| Description |
Silicon microwave power transistor.
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| File Size |
140.00K /
2 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IPC022N03L3
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| OCR Text |
oxidesemiconductorfieldeffecttransistor baredie optimos?3powermostransistorchip ipc022n03l3 datasheet rev.2.5 final industrial&...nitride+imide table1keyperformanceparameters parameter value unit v (br)dss 30 v r ds(on) ... |
| Description |
N-channel enhancement mode
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| File Size |
1,721.57K /
4 Page |
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it Online |
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Price and Availability
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