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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5361203C2W
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| OCR Text |
...ed to v oh or v ol . t wcs is non-restrictive operating parameter. it is included in the data sheet as electrical characteristic s only. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data out pin will remain high impe... |
| Description |
1M x 36 DRAM SIMM(1M x 36 动RAM模块)
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| File Size |
235.89K /
16 Page |
View
it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5364005BSWG
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| OCR Text |
...ced for v oh or v ol t wcs is non-restrictive operating parameter. it is included in the data sheet as electrical characteristics only. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data out pin will remain high impeda... |
| Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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| File Size |
389.50K /
19 Page |
View
it Online |
Download Datasheet
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
KMM5364005CSWG
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| OCR Text |
...ced for v oh or v ol t wcs is non-restrictive operating parameter. it is included in the data sheet as electrical characteristics only. if t wcs 3 t wcs (min), the cycle is an early write cycle and the data out pin will remain high impeda... |
| Description |
4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V
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| File Size |
417.45K /
21 Page |
View
it Online |
Download Datasheet
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Price and Availability
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