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ONSEMI[ON Semiconductor]
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| Part No. |
BUL45_06 BUL45 BUL45G BUL4506
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| OCR Text |
...fi = 100 ns (typ) and tsi = 3.2 ms (typ) @ IC = 2.0 A, IB1 = IB2 = 0.4 A Full Characterization at 125C Tight Parametric Distributions Consi...120 2.8 3.5 110 - 3.5 - ns ms
SWITCHING CHARACTERISTICS: Inductive Load (VCC = 15 Vdc, LC = 200 m... |
| Description |
NPN Silicon Power Transistor
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| File Size |
117.44K /
8 Page |
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Motorola, Inc.
Motorola Inc
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
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| Part No. |
BUL44F BUL44
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| OCR Text |
...) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. Designer's and SWITCHMODE are...120 0.7 0.8 110 110 110 120 1.7 2.25 180 210 -- 180 -- 4.2 190 350 200 -- 1.25 -- 200 -- 175 -- 2.75... |
| Description |
POWER TRANSISTOR 2.0 AMPERES 700 VOLTS 40 and 100 WATTS
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| File Size |
316.99K /
10 Page |
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it Online |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BUK9Y30-75B
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| OCR Text |
...on = VDS / ID
100 s 10 DC 1 ms
10 ms 100 ms 1 1 10 102 VDS (V) 103
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; co...120 Tj (C) 180
10
Tj = 25 C
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. No... |
| Description |
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS logic level FET
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| File Size |
93.27K /
12 Page |
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it Online |
Download Datasheet |
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PHILIPS[Philips Semiconductors]
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| Part No. |
BUK9Y19-55B
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| OCR Text |
...D 102 tp = 10 s
100 s 10 1 ms DC 10 ms 100 ms 1 1 10 VDS (V) 102
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; contin...120 Label is VGS (V) ID (A) 80 10 6 5 4.6 4.4 4.2 4 3.8 40 3.6 3.4 3.2 3 2.8 2.6 0 2 4 6 8
03np29... |
| Description |
N-channel TrenchMOSlogic level FET
N-channel TrenchMOS⑩ logic level FET
N-channel Trenchmos (tm) logic level FET
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| File Size |
92.61K /
12 Page |
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it Online |
Download Datasheet |
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