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Micross Components
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| Part No. |
MIMMG200D060B6N
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| OCR Text |
...figure 5 . s w itc h in g t i mes vs. coll ector curr e n t v cc = 300v t r t f t d ( o n ) 280 240 200 160 80 10 1 0 v cc = 300v i c =200 a v g e =15v t j = 125 c t ( n s ) t r t f t d ( o n ) 100 0 2 4 6 8 10 12 ... |
| Description |
600V 200A IGBT Module RoHS Compliant
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| File Size |
2,542.18K /
5 Page |
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Toshiba Corporation
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| Part No. |
TMP87C809BNG TMP87C409BNG TMP87C409BMG TMP87C809BMG
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| OCR Text |
...= 5 seconds the numbe r of ti mes = one, use of r-t y pe flux solder ability use of sn-3.0ag - 0 .5cu solder bat h solder bath temp erature = 245 c, dipping time = 5 seconds the numbe r of ti mes = one, use of r-t y pe f... |
| Description |
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.2 to 7.6; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.0 to 7.3; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
Zener Diode; Application: General; Pd (mW): 500; Vz (V): 7.3 to 7.7; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: DO-35
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| File Size |
4,747.38K /
89 Page |
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SGS Thomson Microelectronics
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| Part No. |
AN455
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| OCR Text |
...econd the corresponding command mes- sage is sent to the unit selected by the position of the three-way selector. if this selector is in its central position, only the fold/open command is enabled, and the sub- sequent command is sent to bo... |
| Description |
REAR MIRRORS MULTIPLEXING USING L9946
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| File Size |
98.23K /
9 Page |
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NEC Corp.
NEC[NEC]
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| Part No. |
NES1821B-30
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| OCR Text |
mes FET
NES1821B-30
30W L-BAND POWER GaAs FET N-CHANNEL GaAs mes FET
DESCRIPTION
The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input matching circuits are designed... |
| Description |
30W L-BAND POWER GaAs FET N-CHANNEL GaAs mes FET
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| File Size |
44.61K /
8 Page |
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it Online |
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NEC Corp.
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| Part No. |
NE713 NE71300-L NE71300-N NECCORP.-NE713
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| OCR Text |
mes fet ne713 l to ku band low noise amplifier n-channel gaas mes fet data sheet document no. p11691ej2v0ds00 (2nd edition) date published february 1997 n printed in japan ? 1996 features x low noise figure nf = 0.6 db typ. at... |
| Description |
L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs mes FET
L降至Ku波段低噪声放大器N沟道砷化镓场效应晶体
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| File Size |
93.38K /
16 Page |
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it Online |
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