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    Samsung Electronic
Part No. M464S1654DTS
OCR Text ... or enables device operation by masking or enabling all inputs except clk, cke and dqm cke clock enable masks system clock to freeze operation from the next clock cycle. cke should be enabled at least one cycle prior to new command. disabl...
Description 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet

File Size 161.16K  /  11 Page

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    Samsung Electronic
Part No. M464S1654CTS
OCR Text ... or enables device operation by masking or enabling all inputs except clk, cke and dqm cke clock enable masks system clock to freeze operation from the next clock cycle. cke should be enabled at least one cycle prior to new command. disabl...
Description 16Mx64 SDRAM SODIMM based on 16Mx16, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet

File Size 84.45K  /  11 Page

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    SAA2003H

NXP Semiconductors
Part No. SAA2003H
OCR Text ...ng. for each of the sub-bands a masking threshold is calculated. the samples from each of the sub-bands are included in the pasc data with an accuracy that is determined by the available bit-pool and by the difference between the signal pow...
Description Stereo filter and codec

File Size 176.35K  /  44 Page

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    Alliance Semiconductor
Part No. AS4LC1M16S0
OCR Text ...op 2 (1m 16)  read/write data masking  programmable burst length (1/2/4/8/ full page)  programmable burst sequence (sequential/interleaved) programmable cas latency (1/2/3) selection guide symbol ?7 ?8 ?10 unit bus frequency (cl = 3)...
Description (AS4LCxMxxSx) 3.3V 2M X 8/1M X 16 CMOS synchronous DRAM

File Size 868.49K  /  29 Page

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    ST Microelectronics
Part No. MK68901
OCR Text ...urce enable ? individual source masking ? programmable interrupt service modes - polling - vector generation - optional in-service status ? daisy chaining capability . four timers with individually pro- grammable prescaling ? two multimode ...
Description MULTI-FUNCTION PERIPHERAL

File Size 1,832.33K  /  33 Page

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    LV5710GP

Sanyo Semicon Device
Part No. LV5710GP
OCR Text ...50 0 50 mv protective circuit masking time tmask masking time from detection of short-circuit to ic off 18 33 ms short-circuit protective current i lim 35 50 65 ma short-circuit protective voltage v lim 82.5 87.5 92.5 % s...
Description For camera sensor Power supply for charge pump

File Size 94.97K  /  6 Page

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    KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10

ETC[ETC]
Samsung semiconductor
Part No. KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10 KM416S1120DT-GF6 KM416S1120DT-GF7 KM416S1120DT-GF8 KM416S1120DT-GFC KM416S1120DT-G/F7 KM416S1120DT-G/FC KM416S1120DT-G/F10 KM416S1120DT-G/F8
OCR Text ...gle-bit Write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle (2K/32ms) CMOS SDRAM GENERAL DESCRIPTION The KM416S1120D is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words b...
Description 512K x 16bit x 2 Banks Synchronous DRAM LVTTL

File Size 1,126.95K  /  43 Page

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    KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text ...gle-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,57...
Description 64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM

File Size 124.02K  /  11 Page

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    KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F1

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F10 KM416S8030BT-G/F8 KM416S8030BT-G/FA KM416S8030BT-G/FH KM416S8030BT-G/FL
OCR Text ...e-bit write operation * DQM for masking * Auto & self refresh * 64ms refresh period (4K cycle) Part No. KM416S8030BT-G/FA KM416S8030BT-G/F8 KM416S8030BT-G/FH KM416S8030BT-G/FL CMOS SDRAM GENERAL DESCRIPTION The KM416S8030B is 134,217...
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 132.04K  /  11 Page

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    KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL
OCR Text ...e-bit Write operation * DQM for masking * Auto & self refresh * 64ms refresh period (4K cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,09...
Description 2M x 16Bit x 4 Banks Synchronous DRAM

File Size 116.68K  /  10 Page

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