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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
SBP13005D1
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| OCR Text |
... 0 400 v v ebo emitter-base v o lta g e i c = 0 9 .0 v i c col l ector cur re n t 4.0 a i cp col l ector p u lse current 8.0 a i b base cur r ent 2.0 a i bm base peak c u r rent t p = 5ms 4.0 a p c t o tal dissipat i on at t c = 25 75 w t ... |
| Description |
High Voltage Fast-SwitchingNPN Power Transistor
|
| File Size |
319.33K /
4 Page |
 View
it Online |
Download Datasheet
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
SBP13005-O
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| OCR Text |
...t c h i n g s p e e d high v o lta g e ca p ab i li t y w ide re v e r se bias soa general description t h is device is des i gn e d for h i gh volt a ge, h ig h spe e d s w it c h i n g cha r acteristics re qu ired su c h as li g hting s... |
| Description |
High Voltage Fast-SwitchingNPN Power Transistor
|
| File Size |
514.47K /
6 Page |
View
it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
SBP13003-O
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| OCR Text |
...t c h i n g s p e e d high v o lta g e ca p ab i li t y w ide re v e r se bias soa general general general general description description description description t h is device is des i gn e d for h i gh volt a ge, h ig h spe e d s w it c... |
| Description |
High Voltage Fast-SwitchingNPN Power Transistor
|
| File Size |
370.41K /
5 Page |
View
it Online |
Download Datasheet |
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Shenzhen Winsemi Microelectronics Co., Ltd
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| Part No. |
SBR13003B1
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| OCR Text |
...t c h i n g s p e e d high v o lta g e ca p ab i li t y w ide re v e r se bias soa general general general general description description description description t h is device is des i gn e d for h i gh volt a ge, h ig h spe e d s w it c... |
| Description |
High Voltage Fast-SwitchingNPN Power Transistor
|
| File Size |
334.42K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
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