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  isoplus Datasheet PDF File

For isoplus Found Datasheets File :: 281    Search Time::3.234ms    
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    IXYS[IXYS Corporation]
Part No. L468
OCR Text isoplus i4-PACTM DSEE 55-24N1F VRRM = 2400 V IF(AV)M = 55 A trr = 220 ns 1 3 1 3 5 Rectifier Bridge Symbol VRRM VRRM IFAV IF(AV)M IFSM EAS Ptot TC = 90C; sine 180 TC = 90C; d = 0.5 rectangular TVJ = 25C; t = 10 ms; sine 50 ...
Description Dual HiPerFREDTM Epitaxial Diode in isoplus i4-PACTM

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. L532
OCR Text isoplus i4-PACTM IC25 = 30 A = 600 V VCES VCE(sat) typ. = 1.9 V 3 5 4 Preliminary data 1 1 2 5 IGBTs Symbol VCES VGES IC25 IC90 ICM VCEK tSC (SCSOA) Ptot TC = 25C TC = 90C VGE = 15 V; RG = 47 ; TVJ = 125C RBSOA, Clamped ind...
Description IGBT phaseleg in isoplus i4-PAC IGBTphaseleg在isoplus i4 - PAC

File Size 42.82K  /  2 Page

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    FDM100-0045SP

IXYS Corporation
Part No. FDM100-0045SP
OCR Text isoplus i4-PACTM Preliminary data 3 5 4 ID25 = 100 A = 55 V VDSS RDSon typ. = 5.7 m 1 2 5 MOSFET Symbol VDSS VGS ID25 ID90 TC = 25C TC = 90C Conditions TVJ = 25C to 150C Maximum Ratings 55 20 100 80 V V A A Features * tre...
Description Buck Chopper
From old datasheet system

File Size 40.82K  /  2 Page

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    IXFR12N100F IXFR10N100F

IXYS[IXYS Corporation]
Part No. IXFR12N100F IXFR10N100F
OCR Text ... A A A mJ J V/ns W C C C C V~ g isoplus 247TM (IXFR) G (TAB) D Isolated back surface* G = Gate S = Source D = Drain TAB = Drain Features RF capable MOSFETs Double metal process for low gate resistance Unclamped Inductive Switchi...
Description From old datasheet system
HiPerFET Power MOSFETs isoplus247

File Size 89.65K  /  2 Page

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    IXYS
Part No. IXLF19N220A
OCR Text ...gh voltage igbt in high voltage isoplus i4-pac tm advanced technical information ixlf 19n220a ixlf 19n250a 1 5 features high voltage igbt - substitute for high voltage mosfets with significantly lower voltage drop and comparable switc...
Description 2200V high voltage IGBT

File Size 69.46K  /  2 Page

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    FUS45-0045B

IXYS Corporation
Part No. FUS45-0045B
OCR Text ...three phase rectifier bridge in isoplus i4-pac tm advanced technical information 1 5 features ? schottky diodes - very low forward voltage - extremely fast switching  isoplus i4-pac tm package - isolated back surface - low coupling capaci...
Description    Schottky Three Phase Rectifier Bridge in isoplus i4-PACTM

File Size 28.32K  /  1 Page

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    IXFR180N10NBSP IXFR180N10

IXYS[IXYS Corporation]
Part No. IXFR180N10NBSP IXFR180N10
OCR Text ...50 V V V V A A A A mJ J V/ns isoplus 247TM G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features W C C C C V~ g * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated m...
Description Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFET Power MOSFETs isoplus247
From old datasheet system

File Size 32.32K  /  2 Page

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    IXFR24N100

IXYS Corporation
Part No. IXFR24N100
OCR Text ...A A mJ J V/ns W C C C C V~ g isoplus 247TM G D Isolated back surface* G = Gate S = Source * Patent pending D = Drain Features * Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting s...
Description HiPerFETTM Power MOSFETs isoplus247TM(Electrically Isolated Back Surface)

File Size 32.30K  /  2 Page

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    IXFL34N100

IXYS Corporation
Part No. IXFL34N100
OCR Text ...g Features G = Gate E = Emitter isoplus-264TM RDS(on) = 0.28 G C E (TAB) C = Collector Tab = Collector Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical i...
Description HiPerFETTM Power MOSFETs isoplus264(Electrically Isolated Backside)

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For isoplus Found Datasheets File :: 281    Search Time::3.234ms    
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