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  idpuls Datasheet PDF File

For idpuls Found Datasheets File :: 259    Search Time::2.203ms    
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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
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Part No. BUZ100L C67078-S1354-A2 BUZ100LC67078-S1348-A2 BUZ100LE3045A
OCR Text ...t Symbol Values 60 Unit A ID idpuls 240 TC = 101 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 L = 70 H, Tj = 25 C Reverse diode dv/dt kV/s IS =...
Description N-Channel SIPMOS Power Transistor
Omnifet: fully autoprotected Power MOSFET
SIPMOS ? Power Transistor
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)

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    Infineon
Part No. BUZ100S-4
OCR Text ...ve Symbol Values 8 Unit A ID idpuls 32 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 380 dv/dt 6 mJ ID = 8 A, VDD = 25 V, RGS = 25 L = 11.8 mH, Tj = 25 C Reverse diode...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor

File Size 89.37K  /  8 Page

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    BUZ100SL-4

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Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
Part No. BUZ100SL-4
OCR Text ... Symbol Values 7.4 Unit A ID idpuls 29.6 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 380 dv/dt 6 mJ ID = 7.4 A, VDD = 25 V, RGS = 25 L = 13.8 mH, Tj = 25 C Reverse d...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated)
7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
20 characters x 1 Lines, 5x7 Dot Matric Character and Cursor 7.4 A, 55 V, 0.023 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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    BUZ100SL Q67040-S4000-A2

SIEMENS AG
Siemens Semiconductor Group
Infineon
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Part No. BUZ100SL Q67040-S4000-A2
OCR Text ...sed drain current TC = 25 C idpuls 280 E AS Avalanche energy, single pulse ID = 70 A, V DD = 25 V, RGS = 25 L = 155 H, Tj = 25 C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by ...
Description High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
SIPMOS ? Power Transistor

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    BUZ100S Q67040-S4001-A2

SIEMENS AG
Siemens Semiconductor Group
Infineon
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Part No. BUZ100S Q67040-S4001-A2
OCR Text ...sed drain current TC = 25 C idpuls 308 E AS Avalanche energy, single pulse ID = 77 A, V DD = 25 V, RGS = 25 L = 128 H, Tj = 25 C mJ 380 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by ...
Description High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
SIPMOS ? Power Transistor

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    BUZ100 C67078-S1348-A2

SIEMENS AG
http://
Infineon
Siemens Semiconductor Group
Part No. BUZ100 C67078-S1348-A2
OCR Text ...t Symbol Values 60 Unit A ID idpuls 240 TC = 101 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 250 dv/dt 6 mJ ID = 60 A, VDD = 25 V, RGS = 25 L = 70 H, Tj = 25 C Reverse diode dv/dt kV/s IS =...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价)
SIPMOS ? Power Transistor
From old datasheet system

File Size 186.12K  /  9 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
http://
Part No. BUZ101L C67078-S1355-A2 BUZ101LE3045A
OCR Text ...t Symbol Values 29 Unit A ID idpuls 116 TC = 31 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 70 dv/dt 6 mJ ID = 29 A, VDD = 25 V, RGS = 25 L = 83 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 2...
Description N-Channel SIPMOS Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level)
From old datasheet system
SIPMOS ? Power Transistor

File Size 185.48K  /  9 Page

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    BUZ101SL-4

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Siemens Semiconductor Group
Infineon Technologies AG
SIEMENS AG
Part No. BUZ101SL-4
OCR Text ... Symbol Values 4.1 Unit A ID idpuls 16.4 TA = 25 C Pulsed drain current one channel active TA = 25 C Avalanche energy, single pulse EAS 90 dv/dt 6 mJ ID = 4.1 A, VDD = 25 V, RGS = 25 L = 10.7 mH, Tj = 25 C Reverse di...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 4.1 A, 55 V, 0.075 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
Part No. BUZ101SL BUZ101SLE3045A Q67040-S4012-A2
OCR Text ...sed drain current TC = 25 C idpuls 80 E AS Avalanche energy, single pulse ID = 20 A, V DD = 25 V, RGS = 25 L = 450 H, Tj = 25 C mJ 90 IAR E AR Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tj...
Description High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管(N通道增强模式的逻辑电平雪崩级)
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated)
SIPMOS ? Power Transistor

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    http://
SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. BUZ101S Q67040-S4013-A2
OCR Text ... 100 C Pulsed drain current idpuls 88 TC = 25 C Avalanche energy, single pulse EAS 90 mJ ID = 22 A, VDD = 25 V, RGS = 25 L = 372 H, Tj = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
SIPMOS ? Power Transistor
INDUCTOR SHIELDED 470UH 20% SMT
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管(N通道增强模式雪崩额定dv / dt的评价)

File Size 68.63K  /  8 Page

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For idpuls Found Datasheets File :: 259    Search Time::2.203ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

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