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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
GT50J325
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| Description |
Insulated Gate bipolar transistor Silicon N Channel IGBT high power Switching Applications Fast Switching Applications TOSHIBA Insulated Gate bipolar transistor Silicon N Channel IGBT
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| File Size |
168.29K /
7 Page |
View
it Online |
Download Datasheet
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ST Microelectronics, Inc. STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STE70IE120
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| Description |
Monolithic Emitter Switched bipolar transistor ESBT? 1200 V - 70 A - 0.014 Ω power Module Monolithic Emitter Switched bipolar transistor ESBT 1200V 70A 0.014Ohm power Module Monolithic Emitter Switched bipolar transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ power Module
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| File Size |
127.05K /
7 Page |
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it Online |
Download Datasheet
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CENTRAL[Central Semiconductor Corp]
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| Part No. |
CJD32C CJD31C
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| Description |
SMD bipolar power transistor PNP General Purpose Amplifier/Switch COMPLEMENTARY SILICON power transistor From old datasheet system
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| File Size |
126.05K /
2 Page |
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it Online |
Download Datasheet
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Toshiba, Corp.
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| Part No. |
GT60N321
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| Description |
Insulated Gate bipolar transistor Silicon N Channel IGBT high power Switching Applications The 4th Generation high power Switching Applications The 4th Generation 高功率转换应用的第四
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| File Size |
172.02K /
6 Page |
View
it Online |
Download Datasheet
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Price and Availability
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