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  hfe35 Datasheet PDF File

For hfe35 Found Datasheets File :: 740    Search Time::1.922ms    
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    SEMICOA[Semicoa Semiconductor]
Part No. 2N3467L
OCR Text ... T = -55oC Symbol hFE1 hFE2 hFE3 hFE4 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 VBE(sat)3 Min 40 40 40 16 --------0.8 --- ...5 V, IC = 0, 100 kHz < f < 1 MHz Symbol ft COBO CIBO Min 175 ----- Max 500 25 100 Uni...
Description Type 2N3467L Geometry 6706 Polarity PNP
Type 2N3467L Geometry 6706 Polarity PNP

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    SEMICOA[Semicoa Semiconductor]
Part No. 2N3467
OCR Text ... T = -55oC Symbol hFE1 hFE2 hFE3 hFE4 VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 VBE(sat)3 Min 40 40 40 16 --------0.8 --- ...5 V, IC = 0, 100 kHz < f < 1 MHz Symbol ft COBO CIBO Min 175 ----- Max 500 25 100 Uni...
Description Type 2N3467 Geometry 6706 Polarity PNP
Type 2N3467 Geometry 6706 Polarity PNP

File Size 43.52K  /  2 Page

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    2SA1645

NEC
Part No. 2SA1645
OCR Text ...me Symbol ICBO IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* fT Cob ton tstg tf Conditions VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -1.5 A VCE = -2 V, IC = -4 A IC = -4 A, IB = -0...
Description PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 201.00K  /  6 Page

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    2SA1646

NEC
Part No. 2SA1646
OCR Text ...me Symbol ICBO IEBO hFE1* hFE2* hFE3* VCE(sat)1* VCE(sat)2* VBE(sat)1* VBE(sat)2* fT Cob ton tstg tf Conditions VCB = -100 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -0.5 A VCE = -2 V, IC = -2 A VCE = -2 V, IC = -6 A IC = -6 A, IB = -0.3...
Description PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

File Size 197.45K  /  6 Page

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    Sanyo
Part No. 2SC4107
OCR Text ...Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=1.2A VCE=5V, IC=6A VCE=5V, IC=10mA 15* 10 10 Conditions Ratings ...5 2.5 0.3 20 120 Conditions Ratings min typ max 0.8 1.5 Unit V V MHz pF V V V V s s s Cob V(BR)CB...
Description NPN Triple Diffused Planar Silicon Transistor 400V/10A Switching Regulator Applications

File Size 91.98K  /  4 Page

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    KSA1010 KSA1010Y KSA1010YTU KSA1010OTU KSA1010RTU

FAIRCHILD[Fairchild Semiconductor]
Part No. KSA1010 KSA1010Y KSA1010YTU KSA1010OTU KSA1010RTU
OCR Text ...ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Collector Cut-off Current Collector Cut-off Current Collector Cut-off ...5 0.5 1.5 0.5 A mA A mA uA * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Vo...
Description High Speed High Voltage Switching
PNP Epitaxial Silicon Transistor

File Size 48.20K  /  5 Page

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    SEMICOA[Semicoa Semiconductor]
Part No. 2N3960UB SQ3960F 2C3960 2N3960 SD3960F SQ3960
OCR Text ... 10 mA dc, VCE = 1.0 V 40 400 --hFE3 IC = 30 mA dc, VCE = 1.0 V 25 ----VCE(sat) IC = 30 mA dc, IB = 3.0 mA --0.3 V dc Due to limitations of probe testing, only dc parameters are tested. This must be done with pulse width less than 300 s, du...
Description Chip Type 2C3960 Geometry 0003 Polarity NPN 片式2C3960几何0003极性npn

File Size 28.52K  /  1 Page

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    SEMICOA[Semicoa Semiconductor]
Part No. 2N3960
OCR Text ...B = 3.0 mA Symbol hFE1 hFE2 hFE3 hFE4 VBE1 VBE2 VCE(sat)1 VCE(sat)2 Min 40 60 30 30 --------- Max --300 ----0.8 1.0 0.2 0.3 U...5 2.5 Unit ------pF pF Forward Current Transfer Ratio VCE = 4 V, IC = 5.0 mA, f = 100 MHz VCE...
Description Type 2N3960 Geometry 0003 Polarity NPN

File Size 41.95K  /  2 Page

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    Sanyo
Part No. 2SC4110
OCR Text ...Gain Symbol ICBO IEBO hFE1 hFE2 hFE3 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=3.2A VCE=5V, IC=16A VCE=5V, IC=10mA 15* 10 10 Conditions Ratings...5 2.5 0.3 20 300 Conditions Ratings min typ max 0.8 1.5 Unit V V MHz pF V V V V s s s Cob VCB=10V...
Description NPN Triple Diffused Planar Silicon Transistor 400V/25A Switching Regulator Applications
NPN Triple Diffused Planar Silicon Transistor

File Size 106.88K  /  4 Page

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    Panasonic Industrial Solutions
Matsshita / Panasonic
Part No. 2SD2133 0663 2SD2133S 2SD2133Q
OCR Text ...ICBO VCBO VCEO VEBO hFE1 * hFE2 hFE3 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collect...5 V, IC = 1 A VCE = 10 V, IC = 1 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE =...
Description TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 1A I(C) | TO-221VAR 晶体管|晶体管|叩| 50V五(巴西)总裁| 1A条一(c)|21VAR
From old datasheet system
Power Transistors

File Size 65.54K  /  4 Page

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