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hetero Datasheet PDF File

For hetero Found Datasheets File :: 306 Search Time::1.062ms
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				Quanzhou Jinmei Electro... NXP Semiconductors
Part No.	CGD1044H CGD1044H-2015
OCR Text	... Direct Current (DC), employing hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I...
Description	1 GHz, 25 dB gain high output power doubler
File Size	43.13K / 7 Page	View it Online	Download Datasheet

				Sony Corporation
Part No.	SLD301B
OCR Text	...cal use Structure GaAlAs double hetero-type laser diode Absolute Maximum Ratings (Tc = 25C) * Optical power output * Recommended optical power output * Reverse voltage * Operating temperature * Storage temperature Pin Configuration No. 1 2 ...
Description	Block-type 100mW High Power Laser Diode
File Size	62.72K / 7 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	TSHG6400
OCR Text	...emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHG6000 series combines high speed with high radiant power at wavelength of 850 nm. 94 8390 Features * High modulation bandwidth * ...
Description	High Speed IR Emitting Diode in T-1 3/4 Package
File Size	105.00K / 6 Page	View it Online	Download Datasheet

				Quanzhou Jinmei Electro... NXP Semiconductors
Part No.	CGD1042H CGD1042H-2015
OCR Text	... Direct Current (DC), employing hetero junction Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I...
Description	1 GHz, 23 dB gain high output power doubler
File Size	43.14K / 7 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	TSHF5410
OCR Text	...emitting diode in GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. TSHF5410 combines high speed with high radiant power at wavelength of 890 nm. Features * High modulation bandwidth * Extra high radiant...
Description	High Speed Infrared Emitting Diode in T-1 3/4 Package
File Size	104.78K / 6 Page	View it Online	Download Datasheet

				NEC
Part No.	NE32684A NE32684A-T1 NE32684AS
OCR Text	...The NE32684A is a pseudomorphic hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and i...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
File Size	190.46K / 5 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE3514S02-T1C NE3514S02 NE3514S02-T1C-A NE3514S02-T1D NE3514S02-T1D-A
OCR Text	hetero JUNCTION FIELD EFFECT TRANSISTOR NE3514S02 K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES * Super low noise figure and high associated gain NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz * Micro-X plastic (S02) p...
Description	K BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	188.85K / 8 Page	View it Online	Download Datasheet

				California Eastern Labs
Part No.	NE32100001 NE321000
OCR Text	...ESCRIPTION NEC's NE321000 is a hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create high electron mobility. Its excellent low noise figure and high associated gain make it suitable for co...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
File Size	122.23K / 6 Page	View it Online	Download Datasheet

				Bookham, Inc.
Part No.	LC151B-20J57 LC151B-20J59 LC151B-20J34 LC151B-20J28 LC151B
OCR Text	...on. The high reliability buried hetero-structure DFB laser chip ensures the reliability of the LC151B-20 over the entire range of recommended operating conditions. Features: * Wavelength 1510 nm * Designed to operate at 4 Mb/s - 155 Mb/s * ...
Description	4 - 155 Mb/s Single-Mode OSC Laser, 1510 nm
File Size	182.13K / 4 Page	View it Online	Download Datasheet

				NEC
Part No.	NE32984D NE32984D-S NE32984D-SL NE32984D-T1
OCR Text	...The NE32984D is a pseudomorphic hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and i...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
File Size	47.41K / 4 Page	View it Online	Download Datasheet

For hetero Found Datasheets File :: 306 Search Time::1.062ms
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