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For grad Found Datasheets File :: 776 Search Time::1.281ms
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				http:// SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	LOGT671-HO LSGT671-HK LSGT671-J LSGT671-JL LSGT671-K Q62703-Q3633 LOGT671 LOGT671-LO Q62703-Q3154 Q62703-Q3155 Q62703-Q3156 Q62703-Q3157 Q62703-Q3632 LSG_T671
OCR Text	... 120 2.0 2.6 120 2.0 2.6 grad deg. V V VF VF IR IR C0 0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 A 12 8 10 15 15 pF (typ.) (typ.) tr tf 300 150 300 150 300 150 450 200 450 200 ns ns Semiconductor Group...
Description	From old datasheet system Multi TOPLED Bright Green Die
File Size	486.80K / 7 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	LSYA676 LSYA676-PP LSYA676-PR LSYA676-QQ LSYA676-QR Q62703-Q3374 LSY_A676 LSYA676-PQ
OCR Text	...14 120 2.0 2.6 0.096 0.13 grad deg. V V nm/K nm/K (typ.) VF (max.) VF Temperaturkoeffizient von dom (IF = 20 mA) TC Temperature coefficient of dom (IF = 20 mA) Temperaturkoeffizient von peak, IF = 20 mA Temperature coefficient o...
Description	Hyper Multi SIDELED Hyper-Bright LED From old datasheet system
File Size	255.15K / 6 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62703-Q1090 SFH483E7800 SFH483
OCR Text	...3 0.16 0.4 x 0.4 2.7 ... 2.9 grad deg. mm2 mm mm A LxB LxW H Semiconductor Group 2 1997-11-01 SFH 483 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 ...
Description	GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射 From old datasheet system
File Size	33.58K / 5 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	SFH4591 SFH4592 Q62702-P5059 Q62702-P5060 SIEMENSAG-Q62702-P5059
OCR Text	... A LxB LxW 0.09 0.3 x 0.3 10 grad deg. mm2 mm ns Schaltzeiten, Ie von 10% auf 90% und von tr, tf 90% auf 10%, bei IF = 100 mA, tP = 20 ms, RL = 50 Switching times, Ie from 10% to 90% and from 90% to10%, IF = 100 mA, tP = 20 ms, RL...
Description	Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter
File Size	49.73K / 5 Page	View it Online	Download Datasheet

				Osram Opto Semiconductors
Part No.	LT5433
OCR Text	... 40 2.9 3.3 3.9 0.01 10 0.04 grad deg. V V V VF VF VF IR IR TCpeak A A nm/K (typ.) TCdom 0.03 0.04 0.04 nm/K (typ.) TCV - 4.5 - 3.6 - 3.6 mV/K (typ.) opt 2 6 8 lm/W Wellenla...
Description	Hyper Bright LED
File Size	142.07K / 12 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group] SIEMENS AG
Part No.	Q62703-Q1094 SFH486
OCR Text	...nm 11 0.16 0.4 x 0.4 grad deg. mm2 mm A LxB LxW H 5.1 ... 5.7 mm Semiconductor Group 2 1997-11-01 SFH 486 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Schaltzeiten, Ie von 10 % auf 90 % un...
Description	From old datasheet system GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
File Size	37.35K / 4 Page	View it Online	Download Datasheet

				Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] SIEMENS AG SIEMENS A G
Part No.	Q62703-Q1095 SFH487-2 Q62703-Q2174 SFH487
OCR Text	...ens top 20 0.16 0.4 x 0.4 2.6 grad deg. mm2 mm mm A LxB LxW H Semiconductor Group 2 1997-11-01 SFH 487 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 ...
Description	From old datasheet system GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 镓铝砷红外光Lumineszenzdiode 880nm红外线发射器880镓铝砷纳 GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter 880 nm 3 mm, 1 ELEMENT, INFRARED LED, 880 nm
File Size	40.88K / 5 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	Q60215-Y63-S1 BPY63 BPY63P
OCR Text	...0.72 430 ( 280) 0.65 ( 0.45) grad deg. A A/W Electrons Photon mV mA IR S VO ISC Semiconductor Group 194 BPY 63 P Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K)...
Description	Silizium-Fotoelement Silicon Photovoltaic Cell From old datasheet system
File Size	190.66K / 4 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	Q60215-Y67 BPY64P BPY64
OCR Text	...0.72 450 ( 280) 0.25 ( 0.18) grad deg. A A/W Electrons Photon mV mA VO ISC Semiconductor Group 198 BPY 64 P Kennwerte (TA = 25 C, Normlicht A, T = 2856 K) Characteristics (TA = 25 C, standard light A, T = 2856 K) Bezeichnu...
Description	SEALED Silizium-Fotoelement Silicon Photovoltaic Cell From old datasheet system
File Size	156.18K / 3 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	Q62702-P1192 Q62702-P1058 BP103BF BP103B Q62702-P85-S4 BP103B-2 BP103B-3 BP103B-4 BP103BF-2 BP103BF-3 BP103BF-4 Q62702-P1057 Q62702-P85-S2 Q62702-P85-S3
OCR Text	...5 5 (100) 12 5.0 1 (200) grad deg. pF nA Semiconductor Group 206 BP 103 B BP 103 BF Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. The phototransistors are ...
Description	NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter PHOTO TRANSISTOR DETECTOR TVS BIDIRECT 600W 9.0V SMB PHOTO TRANSISTOR DETECTOR NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silizium - Fototransistor东北大学：叩- Silizium - Fototransistor麻省理工Tageslichtsperrfilter TVS ZENER BIDIRECT 600W 85V SMB From old datasheet system
File Size	162.77K / 5 Page	View it Online	Download Datasheet

For grad Found Datasheets File :: 776 Search Time::1.281ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |