| |
|
 |
Toshiba Electronic Devices & Storage Corporation |
| Part No. |
HN1D05FE
|
| Description |
Switching Diode, 400 V, 0.1 A, ES6
|
| Tech specs |
|
|
|
Official Product Page
|
| |
|
 |
Motorola
|
| Part No. |
2N6072 2N6072A 2N6072B 2N6074 2N6074A 2N6074B 2N6075
|
| Description |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V.
|
| File Size |
217.63K /
5 Page |
View
it Online |
Download Datasheet
|
|

Bom2Buy.com

Price and Availability
|