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  fet2-10 Datasheet PDF File

For fet2-10 Found Datasheets File :: 178    Search Time::0.984ms    
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    FTD1011

SANYO[Sanyo Semicon Device]
Part No. FTD1011
OCR Text ...7 PD -- Ta PD(FET1) -- PD(FET2) ou Allowable Power Dissipation, PD(FET1) -- W Allowable Power Dissipation, PD -- W 1.0 M 0.8 nte do 0.8 na ce 0.6 To t 1u nit 0.6 ram ic al di bo ...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 28.94K  /  4 Page

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    FW213

Sanyo Semicon Device
Part No. FW213
OCR Text ...llowable Power Dissipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Drain-to-Source Voltage, VDS - V 2.5 P D (FET2) - P D (FET1) M ou P D - Ta nte Allowable Power D...
Description    DC-DC Converter Applications

File Size 43.89K  /  4 Page

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    FW211

Sanyo Semicon Device
Part No. FW211
OCR Text ...Allowable Power Disipation, PD (FET2) - W 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 P D (FET2) - P D (FET1) Allowable Power Disipation, PD - W PD - Ta M ou 2.0 1.7 nte d ce ram ic bo 1.5 ...
Description    DC-DC Converter Applications
N-Channel Silicon MOSFET DC-DC Converter Applications

File Size 43.25K  /  3 Page

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    SANYO
Part No. FTD2017A
OCR Text ... -- ta p d (fet1) -- p d (fet2) allowable power dissipation, p d -- w allowable power dissipation(fet2), p d -- w allowable power dissipation(fet1), p d -- w it05902 it05903 total dissipation 1 unit mounted on a ceramic boa...
Description Nch Nch

File Size 31.08K  /  4 Page

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    UPA2450B

NEC
Part No. UPA2450B
OCR Text ... x 1.1 mm p d (fet1) : p d (fet2) = 1:1 pw = 10 s i d(pulse) i d(dc) dc (2 units) 100 s 30 ms 1 ms 10 ms v ds - drain to source voltage - v transient thermal resistance vs. pulse width r th(ch-a) - transient therm...
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR

File Size 162.20K  /  8 Page

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    UPA1855 UPA1855GR-9JG

NEC
Part No. UPA1855 UPA1855GR-9JG
OCR Text ...d of 50cm x 1.1mm PD(FET1) : PD(FET2) = 1:1 1 10 100 VDS - Drain to Source Voltage - V DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 25 VGS = 4.5 V VGS = 4.0 V ID - Drain Current - A TRANSFER CHARACTERISTICS 100 10 ID - Drai...
Description Nch enhancement type MOS FET
MOS FIELD EFFECT TRANSISTOR

File Size 65.94K  /  8 Page

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    Sanken
Part No. SLA5054
OCR Text fet2 fet3 symbol specification unit conditions specification unit conditions specification unit conditions min typ max min typ max min typ m...10 v i d 7 5 7a i d( pulse ) *1 15 10 15 a e as *2 15 mj i as 5a p t 5 ( t a =25 c, with all ...
Description S-shape Correction Switch Array For CRT Display

File Size 53.13K  /  2 Page

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    FTD8007

Sanyo Semicon Device
Part No. FTD8007
OCR Text ... Allowable Power Dissipation(FET2), PD -- W IT07349 Note on usage : Since the FTD8007 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO products describ...
Description Nch Nch
N-Channel Silicon MOSFET General-Purpose Switching Device

File Size 37.06K  /  4 Page

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    FW202

SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
Part No. FW202
OCR Text ...Allowable Power Dissipation, PD(FET2) - W Drain Current, I D - A ,,,,,,,, ,,,,,,,, ,,,,,,,, ,,,,,,,, 7I 5 DP 10 7 ID 5 3 2 ASO 10s s 1.8 1.7 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.2 P D (FET 2) - P D (FET1) M ou 1m 10 ...
Description    Ultrahigh-Speed Switching Applications
N-Channel Silicon MOSFET

File Size 51.48K  /  3 Page

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For fet2-10 Found Datasheets File :: 178    Search Time::0.984ms    
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