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NXP Semiconductors N.V.
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| Part No. |
BUK75150-55A
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| OCR Text |
fet) in a plastic package using trenchmos technology. this product has been designed and qualified to the appropriate aec standard for use...junction temperature -55 175 c source-drain diode i s source current t mb =25c - 11 a i sm peak sour... |
| Description |
N-channel TrenchMOS standard level fet N沟道TrenchMOS标准电平场效应管
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| File Size |
172.65K /
13 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BUK7511-55A
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| OCR Text |
fet rev. 02 ? 17 june 2010 product data sheet 1. product profile 1.1 general description standard level n-channel enhancement mode field-ef...junction temperature -55 - 175 c source-drain diode i s source current t mb =25c --75a i sm peak sou... |
| Description |
N-channel TrenchMOS standard level fet N沟道TrenchMOS标准电平场效应管
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| File Size |
168.30K /
13 Page |
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it Online |
Download Datasheet |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AO4914
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| OCR Text |
...capacitance output capacitance (fet + schottky) a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz....junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r ... |
| Description |
Dual N-Channel Enhancement Mode Field
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| File Size |
246.00K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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