extended resistance values ava pdf Datasheet P13 Description --- IC-ON-LINE


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extended resistance values ava Datasheet PDF File

For extended resistance values ava Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	LM8363 LM8363D LM8363DH LM8363N LM8363S
Description	Thin Film Resistor Network; Series:VSSR; resistance:33ohm; resistance Tolerance: /- 5 %; Power Rating:1.4W; Voltage Rating:50V; Temperature Coefficient: /-100 ppm; Package/Case:24-QSOP; Network Circuit Type:Isolated Dual - Alarm Digital Clock
File Size	422.33K / 9 Page	View it Online	Download Datasheet

				EUPEC[eupec GmbH]
Part No.	BSM75GB60DLC
Description	Hchstzulssige Werte Maximum rated values From old datasheet system
File Size	72.68K / 8 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E151611 K4E151611D K4E151612D K4E171611D K4E171612D K4E151611D-J K4E151611D-T K4E151612D-T K4E151612D-J
Description	1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 1K refresh cycle. 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 1K refresh cycle. 1M x 16Bit CMOS Dynamic RAM with extended Data Out
File Size	550.56K / 35 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	MKT1826 MKT1826-533-055 MKT1826-533-055-D MKT1826-533-055-F MKT1826-533-055-G MKT1826-533-055-W
Description	C-values 1000 pF - 4.7 μF, Voltage 40 - 250 VDC, Max. temp. 125°C, High pulse load, Stacked film, PCM 5 Metallized Polyester Film Capacitor
File Size	85.70K / 3 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	KM416C1004CJ-5 KM416C1004CJ-6 KM416C1004CJL-6 KM416C1204CJ-50 KM416C1204CJ-60 KM416C1204CJL-45
Description	1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh 1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms 1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, self-refresh
File Size	803.02K / 35 Page	View it Online	Download Datasheet

				Vishay
Part No.	MKP1839
Description	C-values 1000 pF - 10 μF, Voltage 160 - 630 VDC, Tolerances to 1%, Low losses, Low dielectric absorption, Low profile, AXIAL
File Size	72.22K / 3 Page	View it Online	Download Datasheet

				Littelfuse, Inc.
Part No.	VTD175 VTD170XS VTD170 VTD175L VTD175S VTD175XL VTD200S VTD200 VTD240 VTD210 VTD210L VTD210LS VTD210S VTD210SS VTD210SD VTD175D
Description	85 ∑C to -40 ∑C 10 times % typical resistance change 85 ∑C to -40 ∑C 10 times 【5 % typical resistance change POLYFUSE RESETTABLE FUSES 85 °C to -40 °C 10 times ±5 % typical resistance change
File Size	71.26K / 2 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K4E16708112D K4E160811D K4E160811D-B K4E160811D-F K4E160812D K4E160812D-B K4E160812D-F K4E170811D K4E170811D-B
Description	2M x 8Bit CMOS Dynamic RAM with extended Data Out Data Sheet 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
File Size	254.30K / 21 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	KM48C8104B KM48C8004B KM48C8004BK-6 KM48C8004BS-6 KM48C8104BK-5 KM48C8104BS-6 KM48C8104BS-5
Description	8M x 8bit CMOS dynamic RAM with extended data out, 5V, 50ns 8M x 8bit CMOS dynamic RAM with extended data out, 5V, 60ns
File Size	382.88K / 21 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
Description	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. 4M x 4Bit CMOS Dynamic RAM with extended Data Out Data Sheet 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle. 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
File Size	254.50K / 21 Page	View it Online	Download Datasheet

For extended resistance values ava Found Datasheets File :: 150+ Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |