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  DS2502-E64 Datasheet PDF File

For DS2502-E64 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    HB52E648EN-A6B HB52E648EN-B6B HB52E649EN-A6B HB52E649EN-B6B

Elpida Memory
Part No. HB52E648EN-A6B HB52E648EN-B6B HB52E649EN-A6B HB52E649EN-B6B
Description 512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus
   512 MB Unbuffered SDRAM DIMM, 100 MHz Memory Bus

File Size 207.66K  /  28 Page

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HUA FENG CIRCUIT





    SIEMENS A G
Part No. SIEMENSAG-BCX52-16E6433 BCX52-16E6327
Description 1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR

File Size 115.17K  /  5 Page

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    K4E641612D K4E661612D

Samsung semiconductor
Part No. K4E641612D K4E661612D
Description CMOS DRAM

File Size 395.61K  /  36 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E641612B-TC K4E661612B-TC K4E641612B-L K4E661612B-L
Description 4M x 16bit CMOS Dynamic RAM with Extended Data Out

File Size 891.41K  /  36 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E660812E-TC_L K4E640812E K4E640812E-JC_L K4E640812E-TC_L K4E660812E K4E660812E-JC_L K4E640812E-JC/L K4E660812E-JC/L K4E640812E-TC/L K4E660812E-TC/L
Description 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 189.50K  /  21 Page

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    K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B-JC-5 K4E640812B-JC-6 K4E640812B-JCL-45 K4E640812B-JCL-5 K4E640812B-JCL-6 K4E640812B-TC-45 K4E660812B-JC-6 K4E660812B-JC-45 K4E660812B-JC-5
Description 8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns

File Size 415.47K  /  21 Page

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    K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640812C K4E660812C K4E640812C-JCL-45 K4E660812C-JC-6 K4E640812C-JC-5 K4E660812C-JC-45 K4E640812C-JC-6 K4E660812C-JC-5 K4E640812C-JC-45 K4E660812C-JCL-5
Description 8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
8M x 8bit CMOS dynamic RAM with extended data out, 45ns

File Size 415.01K  /  21 Page

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    K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TCL
Description 16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out

File Size 414.70K  /  21 Page

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    K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4E660812E-JC/L K4E640812E-JC/L K4E660812E-TC/L K4E640812E-TC/L K4E660812E-TL45
Description 8M X 8 EDO DRAM, 45 ns, PDSO32
8M x 8bit CMOS Dynamic RAM with Extended Data Out 8米8位的CMOS动态随机存储器的扩展数据输
(K4E640812E / K4E660812E) 8M x 8bit CMOS Dynamic RAM with Extended Data Out

File Size 194.12K  /  21 Page

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    BAW79BE6433 BAW79BE6327

SIEMENS A G
INFINEON TECHNOLOGIES AG
Part No. BAW79BE6433 BAW79BE6327
Description 1 A, 2 ELEMENT, SILICON, SIGNAL DIODE

File Size 73.59K  /  3 Page

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Part: DS2502-E64+
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