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  diffused-junction Datasheet PDF File

For diffused-junction Found Datasheets File :: 5732    Search Time::1.438ms    
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    BU2523 BU2523AF

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2523 BU2523AF
OCR Text Diffused Power Transistor BU2523AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 11 29 7 10 175 7 45 150 150 UNIT V ...
Description Inductor; Series:IHLP-2525CZ; Inductance:1.5uH; Inductance Tolerance: /- 20 %; Terminal Type:PCB Surface Mount; Current Rating:9A; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Packaging:Tape And Reel 扩散硅功率晶体管
Silicon Diffused Power Transistor

File Size 64.04K  /  6 Page

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    BU2525AF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AF
OCR Text Diffused Power Transistor BU2525AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 70.77K  /  7 Page

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    BU2525AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AW
OCR Text Diffused Power Transistor BU2525AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V...
Description Silicon Diffused Power Transistor

File Size 74.93K  /  7 Page

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    BU2525AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525AX
OCR Text Diffused Power Transistor BU2525AX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 72.99K  /  7 Page

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    BU2525A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525A
OCR Text Diffused Power Transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic ...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V...
Description Silicon Diffused Power Transistor

File Size 51.22K  /  7 Page

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    BU2525DF BU2508DF

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525DF BU2508DF
OCR Text Diffused Power Transistor BU2525DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 9 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 71.42K  /  7 Page

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    BU2525DW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2525DW
OCR Text Diffused Power Transistor BU2525DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 9 125 150 150 UNIT V...
Description Silicon Diffused Power Transistor

File Size 74.81K  /  7 Page

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    BU2525DX

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BU2525DX
OCR Text Diffused Power Transistor BU2525DX GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integra...Junction temperature CONDITIONS VBE = 0 V MIN. -55 MAX. 1500 800 12 30 8 12 200 9 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor 12 A, 800 V, NPN, Si, POWER TRANSISTOR

File Size 73.42K  /  7 Page

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    BU2527AF

NXP Semiconductors
Philips Semiconductors
Part No. BU2527AF
OCR Text Diffused Power Transistor BU2527AF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 45 150 150 UNIT V ...
Description Silicon Diffused Power Transistor

File Size 70.76K  /  7 Page

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    BU2527AW

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BU2527AW
OCR Text Diffused Power Transistor BU2527AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic...Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 800 12 30 8 12 200 7 125 150 150 UNIT V...
Description Silicon Diffused Power Transistor

File Size 74.04K  /  7 Page

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For diffused-junction Found Datasheets File :: 5732    Search Time::1.438ms    
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