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  di-750 Datasheet PDF File

For di-750 Found Datasheets File :: 4246    Search Time::3.703ms    
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    APT6021BFLL APT6021SFLL APT10045JFLL APT10090BFLL APT10090SFLL

ADPOW[Advanced Power Technology]
Part No. APT6021BFLL APT6021SFLL APT10045JFLL APT10090BFLL APT10090SFLL
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 3.09mH, R = 25W, Peak I = 29A j G L 5 dv/ numbers reflect t...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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    APT6021BLL APT6021SLL

Advanced Power Technology
Part No. APT6021BLL APT6021SLL
OCR Text ...t device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) 1.4...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.74K  /  2 Page

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    APT6025BFLL APT6025SFLL

ADPOW[Advanced Power Technology]
Part No. APT6025BFLL APT6025SFLL
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 4.51mH, R = 25W, Peak I = 24A j G L 5 dv/ numbers reflect t...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.51K  /  2 Page

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    APT6025BLL APT6025SLL

ADPOW[Advanced Power Technology]
Part No. APT6025BLL APT6025SLL
OCR Text ...t device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. 1 Repetitive Rating: Pulse width limited by maximum junction TO-247...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.69K  /  2 Page

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    APT6025BVFR

Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
Part No. APT6025BVFR
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 4.16mH, R = 25, Peak I = 25A j G L 5 I -I [Cont.], di/ = 1...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 600V 25A 0.250 Ohm

File Size 69.66K  /  4 Page

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    APT6029BFLL APT6029SFLL

ADPOW[Advanced Power Technology]
Part No. APT6029BFLL APT6029SFLL
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 5.49mH, R = 25W, Peak I = 21A j G L 5 dv/ numbers reflect t...
Description Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.39K  /  2 Page

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    APT6029BLL APT6029SLL

ADPOW[Advanced Power Technology]
Part No. APT6029BLL APT6029SLL
OCR Text ...t device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss high voltage N-Channel enhancement mode power MOSFETS.

File Size 56.91K  /  2 Page

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    APT6030 APT6030BVFR

ADPOW[Advanced Power Technology]
Part No. APT6030 APT6030BVFR
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 5.90mH, R = 25W, Peak I = 21A j G L 5 I I [Cont.], di/ = 1...
Description POWER MOS V 600V 21A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 62.94K  /  4 Page

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    APT6038BFLL APT6038SFLL

Advanced Power Technology
Part No. APT6038BFLL APT6038SFLL
OCR Text ...ecovery Time (IS = -ID [Cont.], di/dt = 100A/s) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/s) Peak Recovery Current (IS = -ID [...750 Method 3471 4 Starting T = +25C, L = 6.64mH, R = 25W, Peak I = 17A j G L 5 dv/ numbers reflect t...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.48K  /  2 Page

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    APT6038BLL APT6038SLL

ADPOW[Advanced Power Technology]
Part No. APT6038BLL APT6038SLL
OCR Text ...t device itself. IS -ID[Cont.] di/dt 700A/s VR VDSS TJ 150C APT Reserves the right to change, without notice, the specifications and information contained herein. TO-247 Package Outline Drain (Heat Sink) 4.69 (.185) 5.31 (.209) ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 56.86K  /  2 Page

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