di-500 pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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di-500 Datasheet PDF File

For di-500 Found Datasheets File :: 31569 Search Time::1.5ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SJ551 2SJ551L 2SJ551S
OCR Text	...rce Voltage V DS (V) Coss 20 di / dt = 50 A / s V GS = 0, Ta = 25 C -2 -5 -10 -20 I DR (A) Crss 10 -0.1 -0.2 -0.5 -1 Reverse Dra...500 PW = 5 s, duty < 1 % Switching Time t (ns) 0 V DD = -10 V -25 V -50 V -20 -4 t d(of...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	54.47K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ552 2SJ552L 2SJ552S 2SJ552L/S
OCR Text	...ery Time trr (ns) 200 100 50 di / dt = 50 A / s VGS = 0, Ta = 25 C Capacitance C (pF) Coss 20 10 -0.1 VGS = 0 f = 1 MHz 0 -1...500 V GS = -10 V, V DD = -30 V PW = 10 s, duty < 1 % td(off) 200 tf 100 50 tr Drain to Source Vol...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching Power switching MOSFET
File Size	55.15K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ553 2SJ553L 2SJ553S
OCR Text	...) 200 100 50 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 100 30 3 1 0.3 Reverse Drain Current I DR (A) Capacitance C (pF) 500 Dynamic Input Characteristics Switching Characteristics V DS (V) -20 Drain to...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	55.75K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ554
OCR Text	...e V DS (V) Crss 20 10 0.1 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 100 30 3 1 0.3 Reverse Drain Current I DR (A) Dynamic Input Char...500 200 100 50 Switching Characteristics -4 t d(off) tf Drain to Source Voltage -40 V...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.62K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ555
OCR Text	... DS (V) Crss Coss Ciss 20 di / dt = 50 A / s VGS = 0, Ta = 25 C 10 -10 -30 -100 -3 -1 -0.1 -0.3 Reverse Drain Current I DR (A) D...500 Switching Time t (ns) -20 -4 tf 200 100 50 20 10 -0.1 -0.3 tr Drain to Source Volta...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.90K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text	...VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 50 A / s -1.0 1 -1.7 2.5 114 178 212 312 117 56 12 7 133 85 2.8 1.0 1.2 0.84 28 7.8 155 255 290 MIN....500 VGS = -4.0 V 10 TA = -25 C 25 C 400 1 75 C 125 C 300 TA = 125C 75C 0.1 ...
Description	Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	60.99K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text	...erse Recovery Time trr (ns) 500 di/dt = 100A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Typical Capacitance vs. Drain to Source Voltage VGS = 0 f = 1 MHz Ciss 100 Coss 10 200 100 50 20 10 0.05 1 0 Capacitance C (pF) Crss 0.1 0.2 0.5 1...
Description	Silicon N-Channel MOS FET Power switching MOSFET
File Size	47.75K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1153 2SK1154
OCR Text	...erse Recovery Time trr (ns) 500 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Ciss Capacitance C (pF) VGS = 0 f = 1 MHz Typical Capacitance vs. Drain to Source Voltage 200 100 50 100 Coss 10 Crss 20 10 0.05 1 0 10 20 ...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	47.74K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1155 2SK1156
OCR Text	...Drain to Source Voltage VDS (V) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 1,000 Ciss Capacitance C (pF) VGS = 0 f = 1 MHz Typical Capacit...500 Drain to Source Voltage VDS (V) VDD = 100 V 250 V 400 VDS 400 V 16 20 Gate to Source Voltage VGS...
Description	Silicon N Channel MOS FET Silicon N-Channel MOS FET
File Size	48.47K / 9 Page	View it Online	Download Datasheet

				Hitachi Semiconductor
Part No.	2SK1157 2SK1158
OCR Text	... Reverse Recovery Time trr (ns) di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test Typical Capacitance vs. Drain to Source Voltage 5,000 VGS = 0 f = 1 MHz 2,000 1,000 500 200 100 50 0.2 Capacitance C (pF) 1,000 Ciss Coss 100 10 ...
Description	Silicon N-Channel MOS FET
File Size	48.24K / 9 Page	View it Online	Download Datasheet

For di-500 Found Datasheets File :: 31569 Search Time::1.5ms
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