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For cres Found Datasheets File :: 4510 Search Time::1.656ms
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				http:// FUJI[Fuji Electric]
Part No.	7MBR35SB120 7MBR35SB-120
OCR Text	... 800 Capacitance : Cies, Coes, cres [ pF ] Collector - Emitter voltage : VCE [ V ] Cies 20 Gate - Emitter voltage : VGE [ V ] 600 15 1000 400 10 Coes cres 200 5 100 0 5 10 15 20 25 30 35 Collector - Emitter vo...
Description	IGBT(1200V/35A/PIM)
File Size	559.44K / 7 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	CM1000HA-24H
OCR Text	...Time Fall Time Symbol Cies Coes cres td(on) tr td(off) tf trr Qrr IE = 1000A, diE/dt = -2000A/s IE = 1000A, diE/dt = -2000A/s VCC = 600V, IC = 1000A, VGE1 = VGE2 = 15V, RG = 3.3 VGE = 0V, VCE = 10V Test Conditions Min. - - - - - - - - - Typ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	48.69K / 4 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRG4BC40F
OCR Text	... tr td(off) tf Ets LE Cies Coes cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off S...
Description	600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISOR(Vces=600V, Vce(on)typ.=1.50V, @Vge=15V, Ic=27A) 绝缘栅双TRANSISOR（VCES和\u003d 600V电压的Vce（on）典\u003d 1.50V，@和VGE \u003d 15V的，集成电路\u003d 27A条）
File Size	165.44K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PC50UD IRG4PC50UD-E
OCR Text	... tr td(off) tf Ets LE Cies Coes cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switchin...
Description	55 A, 600 V, N-CHANNEL IGBT, TO-247AD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 600V UltraFast 8-60 kHz Copack IGBT in a TO-247AC package
File Size	212.73K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRG4PC50U IRG4PC50U-E
OCR Text	... tr td(off) tf Ets LE Cies Coes cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off S...
Description	55 A, 600 V, N-CHANNEL IGBT, TO-247AD 55 A, 600 V, N-CHANNEL IGBT, TO-247AC 600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
File Size	146.22K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRG4PF50WD
OCR Text	... tr td(off) tf Ets LE Cies Coes cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switchin...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	246.57K / 10 Page	View it Online	Download Datasheet

				TOSHIBA[Toshiba Semiconductor]
Part No.	MG600J2YS60A
OCR Text	...ance C (pF) 10000 Coes 1000 cres 100 0.01 0.1 1 10 100 1000 Collector-emitter voltage VCE (V) Reverse bias SOA 10000 Rth - tw 1 (A) 1000 Tc = 25C IC Collector current (C/W) Diode stag...
Description	IGBT Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications TOSHIBA IGBT Module Silicon N Channel IGBT
File Size	186.79K / 9 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
Part No.	SGH80N60UFD SGH80N60UFDTU
OCR Text	...amic Characteristics Cies Coes cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2790 350 100 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(of...
Description	Discrete, High Performance IGBT with Diode Ultrafast IGBT 240 x 320 pixel format (Portrait Mode), CFL Backlight available with power harness 80 A, 600 V, N-CHANNEL IGBT
File Size	642.66K / 8 Page	View it Online	Download Datasheet

				Electronic Theatre Controls, Inc. Semikron International ETC List of Unclassifed Manufacturers
Part No.	SKM100GB125DN
OCR Text	... 20 V, IC = 75 A CCHC Cies Coes cres LCE td(on) tr td(off) tf Eon Eoff VF = VEC VF = VEC VTO rt IRRM Qrr Rthjc Rthjc Rthch per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V 3) IC = 75 A, ind. load RGon = RGoff = 8 Tj = ...
Description	SEMITRANSR M Ultra Fast IGBT Modules
File Size	121.05K / 6 Page	View it Online	Download Datasheet

				http:// FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	2MBI200N-0 2MBI200N-060-03
OCR Text	...IGES VGE(th) VCE(sat) Cies Coes cres ton tr toff tf VF trr Characteristics Min. Typ. - - 4.5 - - - - - - - - - - - - - - 13200 2930 1330 0.6 0.2 0.6 0.2 - - Conditions Max. 2.0 30 7.5 2.8 - - - 1.2 0.6 1.0 0.35 3.0 0.3 VGE=0V, VCE=600V VCE=...
Description	600V / 200A 2 in one-package Circular Connector; Body Material:Aluminum Alloy; Series:MS3116; Number of Contacts:39; Connector Shell Size:20; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin
File Size	179.02K / 4 Page	View it Online	Download Datasheet

For cres Found Datasheets File :: 4510 Search Time::1.656ms
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