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For compound Found Datasheets File :: 13005    Search Time::1.547ms    
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    DYNEX[Dynex Semiconductor]
Part No. MP03XXX300
OCR Text ...ting torque = 5Nm with mounting compound Off-state (Blocking) 0.11 0.12 0.13 0.05 125 -40 to 125 2.5 C/W o C/W C/W C/W o o o C o C kV DYNAMIC CHARACTERISTICS- THYRISTOR Symbol Parameter Conditions Max. Uni...
Description Phase Control Dual SCR, SCR/Diode Modules

File Size 116.30K  /  10 Page

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    DYNEX[Dynex Semiconductor]
Part No. MP03XXX330-12 MP03XXX330 MP03XXX330-08 MP03XXX330-10
OCR Text ...ting torque = 5Nm with mounting compound Off-state (Blocking) 0.11 0.12 0.13 0.05 130 -40 to 130 2.5 C/W o C/W C/W C/W o o o C o C kV DYNAMIC CHARACTERISTICS- THYRISTOR Symbol Parameter Conditions Max. Uni...
Description Phase Control Dual SCR, SCR/Diode Modules

File Size 122.00K  /  10 Page

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    CEL[California Eastern Labs]
Part No. NR3312TX-AZ NR3312 NR3312TF-AZ NR3312TP-AZ NR3312TG-AZ
OCR Text ... *1 Published by the former NEC compound Semiconductor Devices, Ltd. Preliminary Data Sheet PL10638EJ01V0DS 9 NR3312 Series * The information in this document is current as of September, 2006. The information is subject to chang...
Description InGaAs PIN-PD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS

File Size 254.54K  /  12 Page

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    CEL[California Eastern Labs]
Part No. NR4210TX-AZ NR4210 NR4210TF-AZ NR4210TG-AZ NR4210TK-AZ NR4210TL-AZ NR4210TP-AZ
OCR Text ... *1 Published by the former NEC compound Semiconductor Devices, Ltd. Preliminary Data Sheet PL10637EJ01V0DS 11 NR4210 Series * The information in this document is current as of September, 2006. The information is subject to chan...
Description InAlAs APD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS

File Size 278.55K  /  14 Page

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    BUT11APX

NXP Semiconductors
Philips Semiconductors
Part No. BUT11APX
OCR Text ...mbient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W September 1998 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11APX ISOLATION LIMITIN...
Description Silicon Diffused Power Transistor

File Size 76.73K  /  8 Page

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    BUT11AX

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11AX
OCR Text ...mbient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W November 1995 1 Rev 1.100 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11AX ISOLATION LIMITING ...
Description Silicon Diffused Power Transistor

File Size 118.54K  /  8 Page

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    BUT11F

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11F
OCR Text ...mbient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER Repetitive peak voltage from all three terminals ...
Description Silicon Diffused Power Transistor

File Size 116.79K  /  8 Page

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    BUT11XI

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUT11XI
OCR Text ...mbient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W August 1997 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUT11XI ISOLATION LIMITING VA...
Description Silicon Diffused Power Transistor
Hook-Up Wire; Conductor Size AWG:22; No. Strands x Strand Size:7 x 30; Jacket Color:Yellow; Cable/Wire MIL SPEC:MIL-W-76C Type MW; Conductor Material:Copper; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes RoHS Compliant: Yes

File Size 65.24K  /  7 Page

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    FRM5N141GW

Eudyna Devices Inc
Part No. FRM5N141GW
OCR Text ...tion please contact: FUJITSU compound SEMICONDUCTOR, INC. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 2.3 CAUTION Fujitsu compound Semiconductor Products contain gallium arsenide (GaA...
Description InGaAs-APD/Preamp Receiver

File Size 302.15K  /  4 Page

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For compound Found Datasheets File :: 13005    Search Time::1.547ms    
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