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				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP16NS25 STP16NS25FP
OCR Text	...Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 125 V, ID = 8 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 16 A, VGS = 10V Min. Typ. 14.5 26 59 7.9 22.3 83 Max. Unit n...
Description	N-CHANNEL 250V 0.23 OHM 16A TO-220/TO-220FP MESH OVERLAY MOSFET N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY MOSFET N-CHANNEL 250V - 0.23ohm - 16A TO-220 / TO-220FP MESH OVERLAY⑩ MOSFET
File Size	329.30K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP22NS25Z STB22NS25Z
OCR Text	...Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 125 V, ID = 11 A RG = 4.7 VGS = 10 V (see test circuit, Figure 3) VDD = 200V, ID = 20 A, VGS = 10V Min. Typ. 20 30 108 11 40 151 Max. Unit ns ...
Description	N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY?MOSFET N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY MOSFET N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY⑩ MOSFET
File Size	448.11K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP30NS15LFP
OCR Text	...apabilities and unrivalled gate charge and switching characteristics. 3 1 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SWITCHING "S" CAPACITOR ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot EAS(1) dv/dt (2...
Description	N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY⑩ POWER MOSFET N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY POWER MOSFET
File Size	316.20K / 9 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NA50 STP5NA50FI 3064
OCR Text	...the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIB...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	201.17K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics 意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NA60 STP5NA60FI 3065
OCR Text	...the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIB...
Description	N-Channel Enhancement Mode Fast Power MOS Transistor(N沟道增强模式快速功率MOSFET) N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	204.53K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NA80FP 5318
OCR Text	...LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 3 2 DESCRIPTION This series of POWER MOSFETS repr...coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charg...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	49.34K / 5 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NA80 STP5NA80FI 3066
OCR Text	...the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIB...
Description	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
File Size	205.41K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NB100 STP5NB100FP
OCR Text	...LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 3 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STM...coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area...
Description	N - CHANNEL 1000V - 2.4ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET
File Size	105.78K / 9 Page	View it Online	Download Datasheet

				意法半导 STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NB40 STP5NB40FP 5321
OCR Text	...LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED EXTREMELY HIGH dv/dt CAPABILITY 1 2 3 1 2 3 DESCRIPTION Using the latest high vo...coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area...
Description	N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET From old datasheet system
File Size	70.19K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	STP5NB60 STP5NB60FP 6767
OCR Text	...LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 3 1 2 DESCRIPTION Using the latest high voltage MESH OVERLAYTM process, STMicroe...coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area...
Description	N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 600V - 1.8ohm - 5A - TO-220/TO-220FP PowerMESH MOSFET N - CHANNEL 600V - 1.8 - 5A - TO-220/TO-220FP PowerMESH TM MOSFET From old datasheet system
File Size	106.93K / 9 Page	View it Online	Download Datasheet

For charge-coupled Found Datasheets File :: 3290 Search Time::1.984ms
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