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				http:// HITACHI[Hitachi Semiconductor] Hitachi,Ltd.
Part No.	HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text	...erleave (BL = 4/8) Programmable cas latency: 2/3 Byte control by DQMB * * HM5225645F-B60, HM5225325F-B60 * Refresh cycles: 4096 refresh cycles/64 ms * 2 variations of refresh Auto refresh Self refresh * Full page burst length capab...
Description	256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM
File Size	76.58K / 16 Page	View it Online	Download Datasheet

				ELPIDA[Elpida Memory]
Part No.	HM5257165B HM5257165B-75 HM5257165B-A6 HM5257165BTD-75 HM5257165BTD-A6 HM5257405B-75 HM5257405B-A6 HM5257405BTD-75 HM5257405BTD-A6 HM5257805B-75 HM5257805B-A6 HM5257805BTD-75 HM5257805BTD-A6
OCR Text	...M5257405B-75/A6 * Programmable cas latency: 2/3 * Byte control by DQM : DQM (HM5257805B/HM5257405B) : DQMU/DQML (HM5257165B) * Refresh cycles: 8192 refresh cycles/64 ms * 2 variations of refresh Auto refresh Self refresh * Temperature ra...
Description	512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
File Size	447.36K / 62 Page	View it Online	Download Datasheet

				ELPIDA[Elpida Memory]
Part No.	HM5259165B HM5259165B-75 HM5259165B-A6 HM5259165BTD-75 HM5259165BTD-A6 HM5259405B-75 HM5259405B-A6 HM5259405BTD-75 HM5259405BTD-A6 HM5259805B-75 HM5259805B-A6 HM5259805BTD-75 HM5259805BTD-A6
OCR Text	...M5259405B-75/A6 * Programmable cas latency: 2/3 * Byte control by DQM : DQM (HM5259805B/HM5259405B) : DQMU/DQML (HM5259165B) * Refresh cycles: 8192 refresh cycles/32 ms * 2 variations of refresh Auto refresh Self refresh Ordering Info...
Description	512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 】 16-bit 】 4-bank/16-Mword 】 8-bit 】 4-bank /32-Mword 】 4-bit 】 4-bank PC/133, PC/100 SDRAM 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133, PC/100 SDRAM
File Size	351.32K / 63 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	HM5264165A60 HM5264165B60 HM5264165F HM5264165F-75 HM5264165FLTT-75 HM5264165FLTT-A60 HM5264165FLTT-B60 HM5264165FTT-75 HM5264165FTT-A60 HM5264165FTT-B60 HM5264405F HM5264405FLTT-75 HM5264405FLTT-A60 HM5264405FLTT-B60 HM5264405FTT-75 HM5264405FTT-A60 HM5264405FTT-B60 HM5264805F HM5264805F-75 HM5264805F-A60 HM5264805F-B60 HM5264805FLTT-75 HM5264805FLTT-A60 HM5264805FLTT-B60 HM5264805FTT-75 HM5264805FTT-A60 HM5264805FTT-B60
OCR Text	...405F-75/A60/B60 * Programmable cas latency: 2/3 * Byte control by DQM: DQM (HM5264805F/HM5264405F) DQMU/DQML (HM5264165F) * Refresh cycles: 4096 refresh cycles/64 ms * 2 variations of refresh Auto refresh Self refresh * Full page burst l...
Description	64M LVTTL interface SDRAM 133 MHz/100 MHz
File Size	856.76K / 67 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
OCR Text	...r Interleave Burst Programmable cas Latency ; 2, 3 Clocks * * * ORDERING INFORMATION Part No. HY57V641620HGT-5I/55I/6I/7I HY57V641620HGT-KI HY57V641620HGT-HI HY57V641620HGT-8I HY57V641620HGT-PI HY57V641620HGT-SI HY57V641620HGLT-5...
Description	SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
File Size	142.41K / 12 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
Part No.	HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
OCR Text	...Interleave Burst * Programmable cas Latency ; 2, 3 Clocks * * Data mask function by UDQM or LDQM Internal four banks operation O R D E R IN G IN F O R M A T IO N Part No. HY57V641620HGT-5/55/6/7 HY57V641620HGT-K HY57V641620HGT-H ...
Description	4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
File Size	84.91K / 12 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text	...le with address key programs -. cas latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock. Burst read single-bit write operatio...
Description	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	107.61K / 10 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text	...le with address key programs -. cas latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write oper...
Description	16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54 4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
File Size	111.80K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic Samsung semiconductor
Part No.	K4S280832E-TC75 K4S280832E-TL75 K4S281632E-TC60 K4S281632E-TC75 K4S281632E-TL60 K4S281632E-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 K4S280432E-TC75 K4S280432E-TL75
OCR Text	...le with address key programs -. cas latency (2 & 3) -. Burst length (1, 2, 4 & 8 ) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write operation * DQ...
Description	128Mb F-die SDRAM Specification 128Mb E-die SDRAM Specification
File Size	142.11K / 14 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S280832F-TC75 K4S280832F-TL75 K4S281632F-TC60 K4S281632F-TC75 K4S281632F-TL60 K4S281632F-TL75 TL431CDT K4S280432F-TCL75 K4S280832F-TCL75 K4S280432F-TC75 K4S281632F-TCL60 K4S281632F-TCL75 K4S280432F-TL75
OCR Text	...le with address key programs -. cas latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) * All inputs are sampled at the positive going edge of the system clock. * Burst read single-bit write oper...
Description	128Mb F-die SDRAM Specification 128Mb的的F - SDRAM内存芯片规格
File Size	143.50K / 14 Page	View it Online	Download Datasheet

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