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Electronic Theatre Controls, Inc.
ETC[ETC]
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| Part No. |
SC948100
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| OCR Text |
...oud to serve you
All technical caracteristics are subject to change without previous notice. Caracteristiques sujettes a modifications sans preavis.
celduc
r e l a i
s
S/MON/SC948100/A/27/06/2001
Caracteristiques de sortie... |
| Description |
Relais statique monophase de puissance Power Solid State Relay
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| File Size |
82.23K /
2 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2527A
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| OCR Text |
...nction or mishap.
ELECTRICAL caracteristics
Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2
Rth(ch-c) *3
(Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA Min. 44 VDS=10V, ID(RF off)=6.5A, f=2.5 - 2.7GHz 11 -42 Limits Typ. Max. -5 45 12 7... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
248.54K /
3 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2325A_04 MGFS45V2325A MGFS45V2325A04
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| OCR Text |
...nction or mishap.
ELECTRICAL caracteristics
Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2
Rth(ch-c) *3
(Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA Min. 44 VDS=10V, ID(RF off)=6.5A, f=2.3 - 2.5GHz 11 -42 Limits Typ. Max. -5 45 12 7... |
| Description |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
235.26K /
2 Page |
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it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45V2123A_04 MGFS45V2123A MGFS45V2123A04
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| OCR Text |
...nction or mishap.
ELECTRICAL caracteristics
Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2
Rth(ch-c) *3
(Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA Min. 44 VDS=10V, ID(RF off)=6.5A, f=2.1 - 2.3GHz 11 -42 Limits Typ. Max. -5 45 12 7... |
| Description |
2.1 - 2.3GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
234.61K /
2 Page |
View
it Online |
Download Datasheet |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFS45A2527B
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| OCR Text |
...nction or mishap.
ELECTRICAL caracteristics
Symbol Parameter
(Ta=25deg.C) Test conditions VDS = 3V , ID = 84mA Min. 44 11 -42 Limits Typ. Max. -5 45 12 7.5 40 -45 1.2 1.4 Unit V dBm dB A % dBc
deg.C/W
VGS(off) Gate to source cut-... |
| Description |
2.5 - 2.7GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
322.71K /
6 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04
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| OCR Text |
...nction or mishap.
ELECTRICAL caracteristics
Symbol VGS(off) P1dB GLP ID P.A.E. IM3 *2
Rth(ch-c) *3
(Ta=25deg.C) Test conditions VDS = 3V , ID = 60mA Min. 44 VDS=10V, ID(RF off)=6.5A, f=1.9 - 2.0GHz 12 -42 Limits Typ. Max. -5 45 13 7... |
| Description |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
248.84K /
3 Page |
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it Online |
Download Datasheet |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V6472A C456472A
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| OCR Text |
...onditions
43 M
ELECTRICAL caracteristics
Symbol IDSS Gm Parameter Saturated drain current Transconductance
Limits Min. Typ. 20 8.0 45 8 35 -45 Max. -5 1.0 44.5
4
1
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0
Unit A V V dBm dB % dBc deg.C/W
VDS=3V, VGS=0V... |
| Description |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
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| File Size |
40.14K /
2 Page |
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it Online |
Download Datasheet |
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http://
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGFC45V6472A_04 MGFC45V6472A MGFC45V6472A04
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| OCR Text |
... *1 : Tc=25 deg.C
ELECTRICAL caracteristics
Symbol IDSS Gm Parameter Saturated drain current Transconductance
(Ta=25 deg.C) Test conditions Min. VDS=3V, VGS=0V VDS=3V, ID=6.4A VDS = 3V , ID = 120mA 44.5 VDS=10V, ID(RF off)=8.0A, f=6.... |
| Description |
6.4-7.2GHz BAND 32W INTERNALLY MATCHED GaAs FET
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| File Size |
225.98K /
3 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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