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				Sanyo Semicon Device
Part No.	MCH5815
OCR Text	... ed on 0.6 ac er am ic bo 0.4 ar d( 90 0m m2 !0 0.2 .8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C 2 1.0 IT05341 IF -- VF [SBD] 100 7 5 ...
Description	Pch SBD DC / DC Converter Applications
File Size	43.43K / 5 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	MCH5818
OCR Text	... ed 0.6 on ac er am ic bo 0.4 ar d( 90 0m 0.2 m2 !0 .8m m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- C IT07174 No.7754-4/5 MCH5818 Specific...
Description	Pch SBD MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
File Size	40.59K / 5 Page	View it Online	Download Datasheet

				Infineon Technologies
Part No.	SPW17N80C2
OCR Text	...k C th1 C th2 C th,n T am b Page 4 2000-05-29 Preliminary data 1 Power dissipation 2 Drain current SPW17N80C2 Ptot = f (TC) SPW17N80C2 ID = f (TC ) parameter: VGS 10 V SPW17N80C2 240 18 W 200 180 ...
Description	Power Transistor
File Size	189.59K / 11 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	MCH3319
OCR Text	... 0.8 ed on ac er am 0.6 ic bo ar d( 90 0.4 0m m2 ! 0.8 0.2 m m ) 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT04335 No.7199-3/4 MCH3319 Specificati...
Description	Medium Output MOSFETs Ultrahigh-Speed Switching Applications
File Size	29.76K / 4 Page	View it Online	Download Datasheet

				List of Unclassifed Man... Galaxy Semi-Conductor Holdings Limited ETC[ETC] List of Unclassifed Manufacturers
Part No.	RU1P RU1Z
OCR Text	... CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,50 Hz,res is tive or inductive ...4A Maximum reverse current at rated DC blocking voltage Maximum reverse recovery time Typical juncti...
Description	HIGH EFFICIENCY RECTIFIER Hugh Efficiency Rectifier
File Size	48.38K / 2 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRG4RC10S IRG4RC10 IRG4RC10STR IRG4RC10STRL IRG4RC10STRR
OCR Text	... 480F 960V * Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax ) * Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre as e to obta in rated Id. Fig. 13a - Clamped Inductive Load Test Circuit ...
Description	INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, IC=2.0A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.10V，@和VGE \u003d 15V的，集成电路\u003d 2.0安培 600V DC-1 kHz (Standard) Discrete IGBT in a D-Pak package
File Size	119.34K / 8 Page	View it Online	Download Datasheet

				LAMBDA[DENSEI-LAMBDA] Rochester Electronics, LLC
Part No.	ZWQ80-5222 ZWQ80-5224 ZWQ80-5225 ZWQ130-5222 ZWQ130-5224 ZWQ130-5225 ZWQ80
OCR Text	...OL CONNECTOR (CN2, 53) : B2B-XH-AM (J.S.T.) MATCHING HOUSING : XHP-2 (J.S.T.) MATCHING TERMINAL : BXH-001T-P0.6 (J.S.T.) OR SXH-001T-P0.6 (J.S.T.) *CN2 IS NORMALLY SHORTED BY JM-2W-96 (J.S.T.). F : CONNECTOR TO CHANGE V2, V3 OUTPUT VOLTAGE(...
Description	Quad output 80W ~ 130W Quad output 80W ~ 130W 四路输出80130
File Size	136.15K / 2 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	CPH5608
OCR Text	... ed on ac 0.6 er am ic bo ar d 0.4 (6 00 m m2 x0 .8 m 0.2 m )1 un it 160 0 0 20 40 60 80 100 120 140 Ambient Temperature, Ta - C IT01053 No.6442-3/4 CPH5608 S...
Description	N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
File Size	41.01K / 4 Page	View it Online	Download Datasheet

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