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aligns Datasheet PDF File

For aligns Found Datasheets File :: 1369 Search Time::0.906ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH64D64AKQH-75 MH64D64AKQH-10
OCR Text	...ck inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transition edges of DQS FEATURES Max. Frequency CLK Access Time [component level] Type name MH64D64AKQH-75 MH64D64AKQH-10 133MHz 100MHz + 0.75ns + 0.8ns ...
Description	4,294,967,296-BIT (67,108,864-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
File Size	359.29K / 40 Page	View it Online	Download Datasheet

				Zarlink
Part No.	MH89792 74
OCR Text	...edge of the E2o extracted clock aligns approximately with the centre of the received data pulse and can be configured as either a rising or falling edge format by the use of pin 8 (E2oP). SEMICMF.019 3 MH89792 Data Sheet Duri...
Description	E1 Line Interface Unit (LIU) From old datasheet system
File Size	134.43K / 14 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MH8D64AKQC-75 MH8D64AKQC-10
OCR Text	...ck inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transition edges of DQS FEATURES Max. Frequency CLK Access Time [component level] Type name MH8D64AKQC-75 MH8D64AKQC-10 133MHz 100MHz + 0.75ns + 0.8ns ...
Description	536,870,912-BIT (8,388,608-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
File Size	337.22K / 40 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd. DiCon Fiberoptics, Inc. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D553238F-JC K4D553238F-JC2A K4D553238F-JC33 K4D553238F-JC36 K4D553238F-JC40 K4D553238F-JC50 K4D553238F-EC2A0 K4D553238F-JC2A0
OCR Text	...both edges of Data strobe * DLL aligns DQ and DQS transitions with Clock transition * Edge aligned data & data strobe output * Center aligned data & data strobe input * DM for write masking only * Auto & Self refresh * 32ms refresh period (...
Description	256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存 ; Accuracy: 1%; Current Rating:5A; Current Ratio:100:5 A; Terminal Type:Leaded RoHS Compliant: Yes 56Mbit GDDR SDRAM内存 8M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 8M X 32 DDR DRAM, 0.6 ns, PBGA144 LEAD FREE, FBGA-144
File Size	295.12K / 17 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2S56D40ATP-75A M2S56D30ATP-10 M2S56D30ATP-10L M2S56D30ATP-75 M2S56D30ATP-75A M2S56D30ATP-75AL M2S56D30ATP-75L M2V56D40ATP-75L M2S56D20AKT M2S56D20AKT-10 M2S56D20AKT-10L M2S56D20AKT-75 M2S56D20AKT-75A M2S56D20AKT-75AL M2S56D20AKT-75L M2S56D20ATP-10 M2S56D20ATP-10L M2S56D20ATP-75 M2S56D20ATP-75A M2S56D20ATP-75AL M2S56D20ATP-75L M2S56D30AKT M2S56D30AKT-10 M2S56D30AKT-10L M2S56D30AKT-75 M2S56D30AKT-75A M2S56D30AKT-75AL M2S56D30AKT-75L M2S56D40AKT M2S56D40AKT-10 M2S56D40AKT-10L M2S56D40AKT-75 M2S56D40AKT-75A M2S56D40AKT-75AL M2S56D40AKT-75L M2S56D40ATP-10 M2S56D40ATP-10L M2S56D40ATP-75 M2S56D40ATP-75AL M2S56D40ATP-75L M2V56D20AKT-10 M2V56D20AKT-10L M2V56D20AKT-75 M2V56D20AKT-75A M2V56D20AKT-75AL M2V56D20AKT-75L M2V56D20ATP-10 M2V56D20ATP-10L M2V56D20ATP-75 M2V56D20ATP-75A M2V56D20ATP-75AL M2V56D20ATP-75L M2V56D30AKT-10 M2V56D30AKT-10L M2V56D30AKT-75 M2V56D30AKT-75A M2V56D30AKT-75AL M2V56D30AKT-75L M2V56D30ATP-10 M2V56D30ATP-10L M2V56D30ATP-75 M2V56D30ATP-75A M2V56D30ATP-75AL M2V56D30ATP-75L M2V56D40AKT-10 M2V56D40AKT-10L M2V56D40AKT-75 M2V56D40AKT-75A M2V56D40AKT-75AL M2V56D40AKT-75L M2V56D40ATP-10 M2V56D40ATP-10L M2V56D40ATP-75 M2V56D40ATP-75A M2V56D40ATP-75AL M2S56D20ATP75A M2S56D30A
OCR Text	...ock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each positive CLK edge; - data and data mask referenced to both edges of DQS - 4 bank operation controlled by BA0, BA1 (Ba...
Description	256M Double Data Rate Synchronous DRAM
File Size	821.11K / 37 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2S56D40ATP-75L M2S56D40ATP-75AL M2S56D40AKT-75 M2S56D20AKT-75AL M2S56D30AKT-75AL M2S56D40AKT-75AL M2V56D20AKT-75AL M2V56D30AKT-75AL M2V56D40AKT-75AL M2V56D40AKT-75L M2S56D20ATP-75 M2S56D20ATP-75A M2V56D20ATP75A M2V56D30ATP-75A M2S56D30ATP-75A M2V56D20ATP-75A M2V56D40ATP-75A M2V56D20ATP-75L M2V56D30ATP-75L M2V56D40ATP-75L M2S56D20ATP-10L M2V56D20ATP-10 M2V56D20ATP-10L M2S56D20AKT-10 M2S56D20AKT-10L
OCR Text	...ock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions - Commands are entered on each positive CLK edge - Data and data mask are referenced to both edges of DQS - 4-bank operations are controlled by BA0, BA1 (Bank Address) - /CAS lat...
Description	256M Double Data Rate Synchronous DRAM
File Size	765.41K / 40 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M2S56D40ATP75A M2S56D40ATP-75 M2S56D40ATP-10 M2S56D40ATP
OCR Text	...ock inputs (CLK and /CLK) - DLL aligns DQ and DQS transitions with CLK transitions edges of DQS - Commands entered on each positive CLK edge; - data and data mask referenced to both edges of DQS - 4 bank operation controlled by BA0, BA1 (Ba...
Description	256M Double Data Rate Synchronous DRAM
File Size	820.84K / 37 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	M470L2923BN0-CA2 M470L6524BTU0-CLCC M470L2923BN0-CB0 M470L2923BN0-CB3 M470L2923BN0-CCC M470L2923BN0-CLA2 M470L2923BN0-CLB0 M470L2923BN0-CLB3 M470L2923BN0-CLCC M470L2923BNV0-CA2 M470L2923BNV0-CB0 M470L2923BNV0-CB3 M470L2923BNV0-CCC M470L2923BNV0-CLA2 M470L2923BNV0-CLB0 M470L2923BNV0-CLB3 M470L2923BNV0-CLCC M470L3324BT M470L3324BT0-CA2 M470L3324BT0-CB0 M470L3324BT0-CB3 M470L3324BT0-CCC M470L3324BT0-CLA2 M470L3324BT0-CLB0 M470L3324BT0-CLB3 M470L3324BT0-CLCC M470L3324BTU0-CA2 M470L3324BTU0-CB0 M470L3324BTU0-CB3 M470L3324BTU0-CCC M470L3324BTU0-CLA2 M470L3324BTU0-CLB0 M470L3324BTU0-CLB3 M470L3324BTU0-CLCC M470L6524BT0-CA2 M470L6524BT0-CB0 M470L6524BT0-CB3 M470L6524BT0-CCC M470L6524BT0-CLA2 M470L6524BT0-CLB0 M470L6524BT0-CLB3 M470L6524BT0-CLCC M470L6524BTU0-CA2 M470L6524BTU0-CB0 M470L6524BTU0-CB3 M470L6524BTU0-CCC M470L6524BTU0-CLA2 M470L6524BTU0-CLB0 M470L6524BTU0-CLB3
OCR Text	...l clock inputs(CK and CK) * DLL aligns DQ and DQS transition with CK transition * Programmable Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock) * Programmable Burst length (2, 4, 8) * Programmable Burst type (sequenti...
Description	DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb B-die
File Size	272.27K / 20 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4H510838C-UCB3 K4H510438C-UCB0 K4H510438C-ULA2 K4H510438C-ULB0 K4H510438C-ULB3 K4H510438C-UCB3 K4H510438C-UCA2 K4H511638 K4H511638C-ULCC K4H510438C-LA2 K4H510438C-LB0 K4H510438C-LB3 K4H510438C-LCC K4H510438C-UC K4H510838C-UC K4H510838C-UCA2 K4H510838C-UCB0 K4H510838C-UCCC K4H510838C-ULA2 K4H510838C-ULB0 K4H510838C-ULB3 K4H510838C-ULCC K4H511638C-UC K4H511638C-UCA2 K4H511638C-UCB0 K4H511638C-UCB3 K4H511638C-UCCC K4H511638C-ULA2 K4H511638C-ULB0 K4H511638C-ULB3
OCR Text	...l clock inputs(CK and CK) * DLL aligns DQ and DQS transition with CK transition * MRS cycle with address key programs -. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock) -. Burst length (2, 4, 8) -. Burst type (sequen...
Description	512MB C-DIE DDR SDRAM SPECIFICATION
File Size	355.72K / 24 Page	View it Online	Download Datasheet

				ELPIDA MEMORY INC ELPIDA[Elpida Memory] http://
Part No.	EBD21RD4ABNA EBD21RD4ABNA-7B EBD21RD4ABNA-7A EBD21RD4ABNA-10
OCR Text	... clock inputs (CK and /CK) * LL aligns DQ and DQS transitions with CK transitions * Commands entered on each positive CK edge; data referenced to both edges of DQS * Auto precharge option for each burst access * Programmable burst length: 2...
Description	CONNECTOR; PLUG 2GB Registered DDR SDRAM DIMM
File Size	170.37K / 19 Page	View it Online	Download Datasheet

For aligns Found Datasheets File :: 1369 Search Time::0.906ms
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