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  9-bank Datasheet PDF File

For 9-bank Found Datasheets File :: 12570    Search Time::2.281ms    
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    HM5264165A60 HM5264165B60 HM5264165F HM5264165F-75 HM5264165FLTT-75 HM5264165FLTT-A60 HM5264165FLTT-B60 HM5264165FTT-75

HITACHI[Hitachi Semiconductor]
Part No. HM5264165A60 HM5264165B60 HM5264165F HM5264165F-75 HM5264165FLTT-75 HM5264165FLTT-A60 HM5264165FLTT-B60 HM5264165FTT-75 HM5264165FTT-A60 HM5264165FTT-B60 HM5264405F HM5264405FLTT-75 HM5264405FLTT-A60 HM5264405FLTT-B60 HM5264405FTT-75 HM5264405FTT-A60 HM5264405FTT-B60 HM5264805F HM5264805F-75 HM5264805F-A60 HM5264805F-B60 HM5264805FLTT-75 HM5264805FLTT-A60 HM5264805FLTT-B60 HM5264805FTT-75 HM5264805FTT-A60 HM5264805FTT-B60
OCR Text ...A0 A1 A2 A3 VCC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 (Top view) 54 53 52 51 50 49 48 47 46 45 44 43 42 41...Bank select address A12/A13 (BS) CKE DQ0 to DQ15 CS RAS CAS Data-input/output Chip select Row addres...
Description 64M LVTTL interface SDRAM 133 MHz/100 MHz

File Size 856.76K  /  67 Page

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    意法半导
Part No. IMSA110-G20S
OCR Text ...[1] gnd cout [6] cout [7] cout [9] vcc cout [10] cout [12] cout [13] cout [14] vcc gnd cout [15] cout [19] cout [18] cout [17] vcc vcc d[5] ...bank bit, acr[0]. the other set can be altered via the microprocessor interface. once a new set of c...
Description Bi-Lobe Standard Metal Shell Nano Offset Connector

File Size 357.69K  /  26 Page

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    Integrated Silicon Solution Inc
Part No. IS75V16F128GS32-7065BI
OCR Text ...: b 107 ball fbga (top view) (9.00 mm x 10.00 mm body, 0.8 mm ball pitch) 1 2 3 4 5 6 7 8 9 10 a b c d e f g h j k l m nc nc nc nc nc...bank address k-word address bank address k-word address bank a sa0 4 000000h bank b sa36 32 0e8000...
Description 3.0 Volt Multi-Chip Package (MCP) 128 Mbit Simultaneous Operation Flash Memory and 32 Mbit Pseudo Static RAM

File Size 263.13K  /  52 Page

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    K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832A K4S280832A-TC_L10 K4S280832A-TC_L80 K4S280832A-TC_L1H K4S280832A-TC_L1L K4S280832A-TC_L75 K4S280832A-TC/L10 K4S280832A-TC/L1H K4S280832A-TC/L1L K4S280832A-TC/L75 K4S280832A-TC/L80
OCR Text ...A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 3...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 107.61K  /  10 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
OCR Text ...A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 3...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 16M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 Banks Synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    HYMP512U648-E3/C4 HYMP512U728-E3/C4 HYMP532U646-E3/C4 HYMP512U72P8-E3/C4 HYMP512U64P8-E3/C4 HYMP564U648-E3/C4 HYMP564U64

Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
Part No. HYMP512U648-E3/C4 HYMP512U728-E3/C4 HYMP532U646-E3/C4 HYMP512U72P8-E3/C4 HYMP512U64P8-E3/C4 HYMP564U648-E3/C4 HYMP564U64P8-E3/C4 HYMP564U728-E3/C4 HYMP564U72P8-E3/C4 HYMP532U64P6-E3/C4
OCR Text ... hymp564u728-e3/c4 512mb 64mx72 9 1 leaded ecc hymp512u648-e3/c4 1gb 128mx64 16 2 leaded none hymp512u728-e3/c4 1gb 128mx72 18 2 leaded ecc ...bank architecture ?posted cas ? programmable cas latency 3 , 4 , 5 ? ocd (off-chip driver impedance...
Description 240pin DDR2 SDRAM Unbuffered DIMMs based on 512 Mb 1st ver.
Versatile Miniature Switch, High Performance 64M X 72 DDR DRAM MODULE, 0.6 ns, DMA240
Versatile Miniature Switch, High Performance 128M X 72 DDR DRAM MODULE, 0.6 ns, DMA240

File Size 439.59K  /  24 Page

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    ST Microelectronics
Part No. M59MR032-GCT M59MR032D100GC6T M59MR032C120ZC6T M59MR032D120GC6T M59MR032D120ZC6T M59MR032D100ZC6T M59MR032CGC M59MR032DZC
OCR Text ...3 2 1 adq1 adq8 e a17 adq0 g 10 9 adq13 adq12 v ss v ss du du du du du du du du du du du du du du du d c b a m l k j du 3/49 m59mr032c, m5...bank erase, erase suspend, erase re- sume, block protect, block unprotect, block lock- ing, cfi quer...
Description 32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

File Size 353.64K  /  49 Page

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    K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S280832M K4S280832M-TC_L80 K4S280832M-TC_L10 K4S280832M-TC_L1H K4S280832M-TC_L1L K4S280832M-TC/L1L K4S280832M-TC/L1H K4S280832M-TC/L80 K4S280832M-TC/L10
OCR Text ...A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 3...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM米8位4银行同步DRAM LVTTL

File Size 124.69K  /  10 Page

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    K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B-N K4S281632B-NC_L1H K4S281632B-NC_L1L K4S281632B-NC/L1H K4S281632B-NC/L1L K4S281632B-NC1H K4S281632B-NC1L K4S281632B-NL1H
OCR Text ...A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 3...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 128Mb SDRAM, 3.3V, LVTTL, 100MHz
2M x 16Bit x 4 Banks Synchronous DRAM in sTSOP 200万16 × 4银行同步DRAM在sTSOP

File Size 62.82K  /  8 Page

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    K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4S281632B K4S281632B-TC10 K4S281632B-TC1H K4S281632B-TC1L K4S281632B-TC75 K4S281632B-TC80 K4S281632B-TL10 K4S281632B-TL1H K4S281632B-TL1L K4S281632B-TL75 K4S281632B-TL80
OCR Text ...A0 A1 A2 A3 VDD 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 3...bank to be activated during row address latch time. Selects bank for read/write during column addres...
Description 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL

File Size 107.58K  /  10 Page

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