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  8-20v Datasheet PDF File

For 8-20v Found Datasheets File :: 43001    Search Time::1.75ms    
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    IRF3205 IRF3205PBF

IRF[International Rectifier]
Part No. IRF3205 IRF3205PBF
OCR Text ...ed D VDSS = 55V RDS(on) = 8.0m G S ID = 110A Description Advanced HEXFET(R) Power MOSFETs from International Rectifier utili...20V nA -100 VGS = -20V 146 ID = 62A 35 nC VDS = 44V 54 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?)
Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)

File Size 91.40K  /  8 Page

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    IRF3315S IRF3315L

IRF[International Rectifier]
Part No. IRF3315S IRF3315L
OCR Text ... 10 seconds Max. 21 15 84 3.8 94 0.63 20 350 12 9.4 2.5 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C The...20V nA -100 VGS = -20V 95 ID = 12A 11 nC VDS = 120V 47 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V -...
Description Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A)
Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)

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    IRF3315

International Rectifier
Part No. IRF3315
OCR Text ... APPROVED 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP IRF3315 1000 I D , Drain-to-Source Current (A) INPUT NE...20V tp D .U .T IA S + V - DD 400 A 0 .0 1 200 Fig 12a. Unclamped Inductive Tes...
Description Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)

File Size 121.12K  /  8 Page

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    IRF3415L IRF3415S

IRF[International Rectifier]
Part No. IRF3415L IRF3415S
OCR Text ...10 seconds Max. 43 30 150 3.8 200 1.3 20 590 22 20 5.0 -55 to + 175 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Ther...20V nA -100 VGS = -20V 200 ID = 22A 17 nC VDS = 120V 98 VGS = 10V, See Fig. 6 and 13 --- VDD = 75V ...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 152.65K  /  10 Page

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    IRF3415

IRF[International Rectifier]
Part No. IRF3415
OCR Text .... IRF3415 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.5V 5.0V BOTTOM 4.5V TOP 1000 100 I D , Drain-to-Source Current (A) I D , D...20V tp D .U .T IA S + V - DD 600 A 0 .0 1 400 Fig 12a. Unclamped Inductive Tes...
Description Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A)
Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)
Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)

File Size 90.69K  /  8 Page

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    PRHMB200E6

Nihon Inter Electronics Corporation
Part No. PRHMB200E6
OCR Text ...9v 8v 12v 15v 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3 - collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25c i c =100a 400a 200a 0...
Description IGBT Module-Dual

File Size 247.67K  /  4 Page

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    PMDPB70XPE

NXP Semiconductors
Part No. PMDPB70XPE
OCR Text ...age t j = 25 c i d = -2 a fig 8. drain-source on-state resistance as a function of drain current; typical values fig 9. drain-source on-state resistance as a function of gate-source voltage; typical values v ds (v) 0-4 -3 -1 -2 aaa-003...
Description 20 V dual P-channel Trench MOSFET

File Size 823.97K  /  15 Page

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    IRF3703 IRF3703PBF

International Rectifier
Part No. IRF3703 IRF3703PBF
OCR Text ...e Max. 210 100 1000 230 3.8 1.5 20 5.0 -55 to + 175 Units A W W/C V V/ns C Thermal Resistance Parameter RJC RCS RJA Junction...20V nA -200 VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr ...
Description 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?)
Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)

File Size 93.04K  /  8 Page

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    IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR
OCR Text ...on page 10 www.irf.com 1 8/22/00 IRF3704/3704S/3704L Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Br...20V di/dt = 100A/s TJ = 125C, IF = 35.5A, VR=20V di/dt = 100A/s 2 www.irf.com IRF3704/370...
Description 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET(减振钢板基本\u003d 20V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB

File Size 123.62K  /  10 Page

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    IRF3706 IRF3706L IRF3706S

IRF[International Rectifier]
Part No. IRF3706 IRF3706L IRF3706S
OCR Text ... l VDSS 20V RDS(on) max 8.5m ID 77A Ultra-Low Gate Impedance Very Low RDS(on) at 4.5V VGS Fully Characterized Avalanche Voltage and Current TO-220AB IRF3706 D2Pak IRF3706S TO-262 IRF3706L Absolute Maximum Ratings ...
Description Power MOSFET(Vdss=20V/ Rds(on)max=8.5mohm/ Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=8.5mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=8.5mohm Id=77A)

File Size 143.52K  /  11 Page

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