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  6-28a Datasheet PDF File

For 6-28a Found Datasheets File :: 1168    Search Time::1.859ms    
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    IRF[International Rectifier]
Part No. IRHMJ57260SE IRHMJ57260SE-15
OCR Text ...- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.049 4.5 -- 10 25 100 -100 165 45 75 35 125 80 50 -- V V/C V S( ) A Test Conditions VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 28A A VDS = VGS, ID = 1.0mA VDS = 15V, I...
Description Simple Drive Requirements
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)

File Size 165.83K  /  8 Page

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    IRFP3710PBF

International Rectifier
Part No. IRFP3710PBF
OCR Text ... from case ) c mounting torque, 6-32 or m3 srew 10 lbf?in (1.1n?m) absolute maximum ratings parameter typ. max. units r q jc junction-to-ca...28a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transco...
Description 100V Single N-Channel HEXFET Power MOSFET in a TO-247AC package

File Size 192.16K  /  8 Page

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    IRF[International Rectifier]
Part No. IRFZ46NSPBF IRFZ46NLPBF
OCR Text ...DS = 44V 26 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 28A ns --- RG = 12 --- RD = 0.98, See Fig. 10 Between lead, nH 7.5 --- and center of die contact 1696 --- VGS = 0V 407 --- pF VDS = 25V 110 --- = 1.0MHz, See Fig. 5 583 152 I...
Description    HEXFET Power MOSFET

File Size 671.32K  /  10 Page

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    Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. IRFS540 IRFS540A
OCR Text ... C ) 110 + 20 _ 385 17 3.9 6.5 39 0.26 - 55 to +175 O 1 O 1 O 3 O 2 Linear Derating Factor Operating Junction and Storage Temper...28A, RG=9.1 See Fig 13 VDS=80V,VGS=10V, ID=28A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode...
Description Advanced Power MOSFET

File Size 257.81K  /  7 Page

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    IRFZ46N_04 IRFZ46N IRFZ46NPBF

IRF[International Rectifier]
Part No. IRFZ46N_04 IRFZ46N IRFZ46NPBF
OCR Text ...for 10 seconds Mounting torque, 6-32 or M3 srew Max. 53 37 180 107 0.71 20 28 11 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf*in (1.1...28A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 28A 25 VDS = 55V, VGS = 0V A 250 VDS = 44V, VG...
Description HEXFET? Power MOSFET(VDSS = 55V,RDS(on) = 16.5mΩ,ID = 53A)
HEXFET㈢ Power MOSFET(VDSS = 55V,RDS(on) = 16.5mヘ,ID = 53A)

File Size 179.99K  /  9 Page

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    IRF[International Rectifier]
Part No. IRFU3706CPBF IRFR3706CPBF
OCR Text ...-- --- Gate Threshold Voltage 0.6 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage ...28A 12 nC VDS = 10V 8.3 VGS = 4.5V 24 VGS = 0V, VDS = 10V --- --- VDD = 10V ns --- ID = 28A --- RG...
Description    SMPS MOSFET

File Size 252.30K  /  10 Page

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    TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
http://
Part No. IRFN054SMD
OCR Text 6 0 (0 .1 4 2 ) M ax. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 3 .4 1 (0 .1 3 4 ) 4 .1 4 (0 .1 ...28A 180A 100W 0.8W/C 480mJ 4.5V/ns -55 to 150C 300C 1.25C/W 3C/W Notes 1) Pulse Test: Pulse Width...
Description N-CHANNEL POWER MOSFET 45 A, 60 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 23.28K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. FSJ260R4 FSJ260D FSJ260D1 FSJ260D3 FSJ260R FSJ260R1 FSJ260R3 FSJ264D FSJ264D1 FSJ264D3
OCR Text ...1 0.050 UNITS V V nA A V MIN 0.6 TYP MAX 1.8 560 UNITS V ns Electrical Specifications up to 100K RAD PARAMETER Drain to Source Breakdow...28A 2.0 NORMALIZED rDS(ON) 12V QG 1.5 QGS QGD 1.0 VG 0.5 0.0 -80 CHARGE -...
Description 33A/ 250V/ 0.080 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

File Size 46.02K  /  8 Page

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