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5.9 a Datasheet PDF File

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				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	...1.6 0.1 0.8 0.1 2 0.2+0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 0.5 FEaTURES * Low Voltage Use. * High fT * Low Cre * Low NF * High : ...9 6 2 10 60 150 -65 to +150 V V V ma mW C C Document No. P10388EJ2V0DS00 (2nd edition) (Previous ...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text	...E = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 ma, f = 2 GHz) 2 1.6 0.1 1.0 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 ...9 6 2 30 125 150 -65 to +150 V V V ma mW C C 1. Emitter 2. Base 3. Collector Document No. P103...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITaXIaL TRaNSISTOR 3 PINS ULTRa SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
File Size	59.95K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	... Gain Bandwidth Product (fT = 6.5 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PaCKaGE DIMENSIONS in mi...9 0.1 Embossed tape 8 mm wide. Pin3 (Base), Pin4 (Emitter) face to perforation side of the tape. Em...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	...VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 150 150 -65 to +150 V V V ma mW C C Caution; Electrostatic Sensitive Device. Document No. P10400E...9.0 0.25 15 1.2 2.5 0.8 MIN. TYP. MaX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE =...
Description	HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 150 150 -65 to +150 V V V ma mW C C Caution; Electrostatic Sensitive Device. Document No. P10401E...9.5 1.8 3.0 0.8 MIN. TYP. MaX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION VCB = 10 V, IE = 0 VEB =...
Description	L BaND, Si, NPN, RF SMaLL SIGNaL TRaNSISTOR HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5014 2SC5014-T1 2SC5014-T2
OCR Text	...Cre \|S21e\|2 NF 9 75 12 0.2 11 2.5 4.0 0.4 MIN. TYP. MaX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 ma1 VCE = 3 V, IC = 5 ma VCB = 3 V, IE = 0, f = 1 MHz2 VCE = 3 V, IC = 5 ma,f = 2....
Description	HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD
File Size	48.18K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text	...fT Cre \|S21e\|2 9 75 12 0.3 11 0.5 MIN. TYP. MaX. 0.1 0.1 150 GHz pF dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 ma1 VCE = 3 V, IC = 10 ma VCB = 3 V, IE = 0, f = 1 MHz2 VCE = 3 V, IC = 10 ma, f = 2.0 GHz V...
Description	Discrete HIGH FREQUENCY LOW NOISE aMPLIFIER NPN SILICON EPITaXIaL TRaNSISTOR 4 PINS SUPER MINI MOLD
File Size	49.94K / 8 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5019
OCR Text	...E = 8V, IC = 20ma, f = 800MHz 7.5 15 10 80 5 6 0.9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit a a V V 2.50.1 +0.25 1 Transistor PC -- Ta 1.4 2SC5019 IC -- VCE 24 Ta=25C 20 IB=200a 100 120 VCE=8V IC -- VBE...
Description	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
File Size	37.02K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5022
OCR Text	...-- -- -- -- -- Max 10 100 10 -- 5.0 V Unit a a a Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 V, RBE = VEB = 6 V, IC = 0 VCE = 5 V, IC ...9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park ...
Description	Silicon NPN Triple Diffused
File Size	33.36K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5032
OCR Text	....2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (aSO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	57.59K / 3 Page	View it Online	Download Datasheet

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