5.2-5.9 pdf Datasheet P13 Full Text Search --- IC-ON-LINE


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5.2-5.9 Datasheet PDF File

For 5.2-5.9 Found Datasheets File :: 417835 Search Time::5.938ms
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				NEC[NEC] NEC Corp.
Part No.	2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text	...1.6 0.1 0.8 0.1 2 0.2+0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 0.5 FEATURES * Low Voltage Use. * High fT * Low Cre * Low NF * High : 12.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz) : 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz) 8.5...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
File Size	57.57K / 10 Page	View it Online	Download Datasheet

				NEC Corp.
Part No.	2SC5010 2SC5010-T1 2SC5010-T1-T2
OCR Text	...E = 3 V, IE = 0, f = 1 MHz) : 1.5 dB TYP. (@ VCE = 3 V, IC = 3 mA, f = 2 GHz) 2 1.6 0.1 1.0 0.2 +0.1 -0 0.5 0.3 +0.1 -0 0.15 +0.1 -0.05 PACKAGE DIMENSIONS in milimeters 1.6 0.1 0.8 0.1 * High \|S21e\|2 : 8.5 dB TYP. (@ VCE = 3 V...
Description	NPN epitaxial-type silicon transistor NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD 128 x 128 pixel format, LED or EL Backlight available
File Size	59.95K / 10 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text	... Gain Bandwidth Product (fT = 6.5 GHz TYP.) * Low Noise, High Gain * Low Voltage Operation 2.0 0.2 0.60 0.65 PACKAGE DIMENSIONS in millimeters 0.3 +0.1 -0.05 2.1 0.2 1.25 0.1 0.3 +0.1 -0.05 (LEADS 2, 3, 4) (1.3) XYZ ORDER...
Description	NPN epitaxial-type silicon transistor HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	50.99K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5012 2SC5012-T1 2SC5012-T2
OCR Text	...VCEO VEBO IC PT Tj Tstg 20 10 1.5 65 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P10400E...2 3 1993 2SC5012 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff C...
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.43K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5013 2SC5013-T1 2SC5013-T2 2SC5013-EB
OCR Text	...VCEO VEBO IC PT Tj Tstg 20 10 1.5 35 150 150 -65 to +150 V V V mA mW C C Caution; Electrostatic Sensitive Device. Document No. P10401E...2 NF 7.5 50 100 10 0.25 9.5 1.8 3.0 0.8 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB UNIT TEST CONDITION ...
Description	L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	51.33K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	2SC5014 2SC5014-T1 2SC5014-T2
OCR Text	...Cre \|S21e\|2 NF 9 75 12 0.2 11 2.5 4.0 0.4 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 5 mA1 VCE = 3 V, IC = 5 mA VCB = 3 V, IE = 0, f = 1 MHz2 VCE = 3 V, IC = 5 mA,f = 2....
Description	HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	48.18K / 8 Page	View it Online	Download Datasheet

				NEC[NEC] NEC Corp.
Part No.	2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text	...fT Cre \|S21e\|2 9 75 12 0.3 11 0.5 MIN. TYP. MAX. 0.1 0.1 150 GHz pF dB UNIT TEST CONDITION VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 10 mA1 VCE = 3 V, IC = 10 mA VCB = 3 V, IE = 0, f = 1 MHz2 VCE = 3 V, IC = 10 mA, f = 2.0 GHz V...
Description	Discrete HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD
File Size	49.94K / 8 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5019
OCR Text	...E = 8V, IC = 20mA, f = 800MHz 7.5 15 10 80 5 6 0.9 10 11.5 1.7 1.2 250 GHz pF dB dB dB min typ max 1 1 Unit A A V V 2.50.1 +0.25 1 Transistor PC -- Ta 1.4 2SC5019 IC -- VCE 24 Ta=25C 20 IB=200A 100 120 VCE=8V IC -- VBE...
Description	Silicon NPN epitaxial planer type(For UHF band low-noise amplification)
File Size	37.02K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SC5022
OCR Text	...-- -- -- -- -- Max 10 100 10 -- 5.0 V Unit A A A Test conditions VCE = 1500 V, RBE = 0 VCE = 1500 V, RBE = VEB = 6 V, IC = 0 VCE = 5 V, IC = 1 mA I C = 10 mA, IB = 2 mA 2 2SC5022 Collector Power Dissipation vs. Ambient Temperature 4...
Description	Silicon NPN Triple Diffused
File Size	33.36K / 7 Page	View it Online	Download Datasheet

				PANASONIC[Panasonic Semiconductor]
Part No.	2SC5032
OCR Text	....2 Solder Dip 13.7-0.2 +0.5 High-speed switching High collector to base voltage VCBO Wide area of safe operation (ASO) Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which...
Description	Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
File Size	57.59K / 3 Page	View it Online	Download Datasheet

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