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IRF[International Rectifier]
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| Part No. |
IRF7338
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| OCR Text |
... 6.0 9.6 7.6 13 26 27 34 25 640 490 340 80 110 58 Max. -- -- -- -- 0.034 0.060 0.150 0.200 1.5 -1.0 -- -- 20 -1.0 50 -25 100 100 8.6 6.6 1.9...0MHz P-Channel VGS = 0V, VDS = -9.0V, = 1.0KHz
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
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| Description |
HEXFET Power MOSFET
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| File Size |
185.40K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRF7406 IRF7406TR
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| OCR Text |
.... 10 2.5 4.0 nH pF 1100 490 220
D
Between lead tip and center of die contact VGS = 0V VDS = -25V = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton
Parameter Continuous ... |
| Description |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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| File Size |
200.65K /
9 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4IBC20W_04 IRG4IBC20W IRG4IBC20WPBF IRG4IBC20W04
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| OCR Text |
...-- nH Measured 5mm from package 490 -- VGE = 0V 38 -- pF VCC = 30V See Fig. 7 8.8 -- = 1.0MHz
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10H, RG... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR
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| File Size |
212.46K /
8 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGIB7B60KDPBF
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| OCR Text |
... 32 42 -- 220 330 -- 270 381 -- 490 711 -- 22 27 -- 21 25 -- 180 198 -- 40 56 -- 7.5 -- -- 440 660 -- 38 57 -- 16 24 FULL SQUARE 10 -- -- --...0MHz TJ = 150C, IC = 54A, Vp = 600V VCC=500V,VGE = +15V to 0V,RG = 50 TJ = 150C, Vp = 600V, RG = 100... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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| File Size |
898.75K /
12 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRGPH40F IRGPH40
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| OCR Text |
...-- ns IC = 17A, V CC = 960V 250 490 VGE = 15V, R G = 10 210 390 Energy losses include "tail" 1.0 -- 3.0 -- mJ See Fig. 9, 10, 11, 14 4.0 7.5...0MHz
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See ... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=17A)
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| File Size |
217.67K /
6 Page |
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it Online |
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WTE[Won-Top Electronics]
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| Part No. |
KBJ6M KBJ6A KBJ6A_06 KBJ6B KBJ6D KBJ6G KBJ6J KBJ6K
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| OCR Text |
...5 Inner Box Size L x W x H (mm) 490 x 145 x 135 Quantity (PCS) 750 Carton Size L x W x H (mm) 510 x 305 x 160 Quantity (PCS) 1,500 Approx. Gross Weight (KG) 17.0
Note: 1. Anti-static tube, water clear color.
KBJ6A - KBJ6M
3 of 4
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| Description |
6.0A SINGLE-PHASE BRIDGE RECTIFIER
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| File Size |
73.23K /
4 Page |
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it Online |
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WTE[Won-Top Electronics]
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| Part No. |
KBJ8M KBJ8A KBJ8A_06 KBJ8B KBJ8D KBJ8G KBJ8J KBJ8K
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| OCR Text |
...5 Inner Box Size L x W x H (mm) 490 x 145 x 135 Quantity (PCS) 750 Carton Size L x W x H (mm) 510 x 305 x 160 Quantity (PCS) 1,500 Approx. Gross Weight (KG) 17.0
Note: 1. Anti-static tube, water clear color.
KBJ8A - KBJ8M
3 of 4
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| Description |
8.0A SINGLE-PHASE BRIDGE RECTIFIER
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| File Size |
73.24K /
4 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM4835CS TSM4835
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| OCR Text |
...---54 8.5 10.3 24 12 78 37 2520 490 330 60 --30 30 120 80 ---pF nS BVDSS RDS(ON) RDS(ON) VGS(TH) IDSS IGSS gfs - 30 ---1 -----13 22 ---22 23 -18 30 -3 - 1.0 100 -34 nC V uA nA S V m
Dynamic
Note : pulse test: pulse width <=300uS, dut... |
| Description |
30V P-Channel Enhancement Mode MOSFET
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| File Size |
168.81K /
5 Page |
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it Online |
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TSC[Taiwan Semiconductor Company, Ltd]
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| Part No. |
TSM55N03CP TSM55N03
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| OCR Text |
...0.105 2.300 2.390 0.090 0.094 0.490 0.570 0.019 0.022 1.460 1.580 0.057 0.062 0.520 5.340 1.460 0.570 5.550 1.640 0.020 0.210 0.057 0.022 0.219 0.065
I B
G D C H
TSM55N03
3-3
2005/04 rev. B
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| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
129.37K /
3 Page |
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it Online |
Download Datasheet |
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Price and Availability
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