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For 40-ch Found Datasheets File :: 23818 Search Time::2.578ms
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				HITACHI[Hitachi Semiconductor]
Part No.	2SK1165 2SK1166
OCR Text	...-- -- -- -- -- -- -- -- -- -- 0.40 0.45 10 1450 410 55 20 70 120 60 1.0 450 3.0 0.55 0.60 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ...ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW 1 D = PW T 0.03 1S 0.01 10 lse t ...
Description	Silicon N-Channel MOS FET
File Size	49.04K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1167 2SK1168 2SK1157 2SK1158 2SK1159 2SK1160
OCR Text	...0 110 150 70 1.0 500 3.0 0.36 0.40 -- -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V ns I F = 15 A, VGS = 0 I F = 15 A, VGS = 0, diF/dt...ch-c (t) = S(t) * ch-c ch-c = 1.25C/W,TC = 25C PDM D = PW T PW T 100 m 1 10 Switching Time Test C...
Description	Silicon N-Channel MOS FET
File Size	48.23K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK1169 2SK1170
OCR Text	...istics VDS = 20 V Pulse Test 40 Drain Current ID (A) 30 12 20 5V 8 4 75C -25C TC = 25C 10 VGS = 4 V 0 10 20 30 40 Drain...ch-c (t) = S (t) * ch-c ch-c = 1.04C/W,TC = 25C PDM D = PW T PW T 100 1m 10 m Pulse Width PW (s) 10...
Description	Silicon N-Channel MOS FET
File Size	48.20K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPCA8060-H
OCR Text	... 0.1 i d ? v ds 5 80 60 40 20 0 100 0 2 v gs = 2.5 v 4 3 1 2.8 3 2.9 2.6 4.5 , 4 6 3.2 3.1 5 3.4 10 8 i d ? v ds 50 30 20 0 40 10 0 0.2 0.4 0.6 0.8 v gs = 2.5 v 2.6 2.9 10 1 4.5 4 2.7 6 3 2.8 8 ...
Description	Power MOSFET (N-ch single VDSS≤30V)
File Size	211.25K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TPC8134
OCR Text	... dss = -10 a (max) (v ds = -40 v) (4) enhancement mode: v th = -0.8 to -2.0 v (v ds = -10 v, i d = -0.1 ma) 3. 3. 3. 3. packaging...ch t stg rating -40 -25/+20 -5 -20 1.9 1.0 11 -5 150 -55 to 150 unit v a w w mj a note: using co...
Description	MOSFETs Lithium-Ion Secondary Batteries Power Management Switches
File Size	265.62K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TPC8134
OCR Text	... dss = -10 a (max) (v ds = -40 v) (4) enhancement mode: v th = -0.8 to -2.0 v (v ds = -10 v, i d = -0.1 ma) 3. 3. 3. 3. packaging...ch t stg rating -40 -25/+20 -5 -20 1.9 1.0 11 -5 150 -55 to 150 unit v a w w mj a note: using co...
Description	Power MOSFET (P-ch single)
File Size	266.13K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SK2007
OCR Text	...pical Output Characteristics 50 40 30 20 10 VGS = 4 V 0 4 8 12 16 20 0 10 V 8V 50 Pulse Test Drain Current I D ( A ) 6V 40 30 20 10 Typic...ch-c (t) = S (t) * ch-c ch-c = 1.25C/W, TC = 25C PDM PW 1 D = PW T 0.02 0.03 0.01 Pulse hot 1S ...
Description	Silicon N-Channel MOS FET
File Size	47.39K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK9A45D
OCR Text	...dissipation (tc = 25c) p d 40 w single pulse avalanche energy (note 2) e as 170 mj avalanche current i ar 9 a repetitive avalanche energy (note 3) e ar 4.0 mj channel temperature t ch 150 c storage temperature range t ...
Description	Power MOSFET (N-ch 250V<VDSS≤500V)
File Size	207.53K / 6 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK20S06K3L
OCR Text	... ar t ch t stg rating 60 20 20 40 38 17 20 175 -55 to 175 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) ma...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	238.53K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TK20J60U-F
OCR Text	...current pulse (note 1) i dp 40 a drain power dissipation (tc = 25c) p d 190 w single pulse avalanche energy (note 2) e as 1...ch 150 c storage temperature range t stg ? 55 to 150 c note: using continuously under heav...
Description	Switching Regulator Applications
File Size	248.17K / 6 Page	View it Online	Download Datasheet

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