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  4.9-5.9ghz Datasheet PDF File

For 4.9-5.9ghz Found Datasheets File :: 741    Search Time::2.922ms    
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    SIEMENS AG
Part No. BFP182
OCR Text ....2 db at 900 mhz vps05178 2 1 3 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin config...9 f - - noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 gh...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

File Size 116.33K  /  7 Page

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    MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T

MAXIM - Dallas Semiconductor
Maxim Integrated Products, Inc.
Part No. MAX2016 MAX2016ETI MAX2016ETID MAX2016ETITD MAX2016ETI-T
OCR Text ...INA+ RFINAGND COUTH CSETH 1 2 3 4 5 6 7 8 COR 9 VCC 10 SETD 11 OUTD 12 VCC 13 FV2 14 FV1 27 26 25 24 22 21 FB1 20 VCC 19 RFINB+ FB2 18 RFINB17 GND 16 COUTL 15 CSETL FA2 RF/IF Power Amplifier (PA) Linearization MAX2016 Typical Appli...
Description 2.7 V to 5.25 V, LF-to-2.5 GHz dual logarithmic detector/controller for power, gain, and VSWR measurement
LF-to-2.5GHz Dual Logarithmic Detector/ Controller for Power, Gain, and VSWR Measurements
LF-to-2.5GHz Dual Logarithmic Detector/Controller for Power, Gain, and VSWR Measurements

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    Q62702-F1490 BFR180W

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-F1490 BFR180W
OCR Text ...ipation Symbol Values 8 10 10 2 4 0.5 mW 30 150 - 65 ... + 150 - 65 ... + 150 790 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg ...9 8 1V 9 8 0.7V 7 6 5 4 3 1V 0.7V 7 6 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0...
Description NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)
From old datasheet system

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    SIEMENS AG
Part No. BFP182R
OCR Text ...bfp 182r rg^s 1 = e 2 = c 3 = e 4 = b sot-143r maximum ratings parameter symbol value unit collector-emitter voltage v ceo 12 v collector-em...9 f - - noise figure i c = 3 ma, v ce = 8 v, z s = z sopt , f = 900 mhz f = 1.8 gh...
Description NPN Silicon RF Transistor(NPN 射频硅晶体管)

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    TA4500F

Toshiba Semiconductor
Part No. TA4500F
OCR Text ...ge Pd (Note 2) Topr Tstg Rating 4.5 10 0 0 500 -40 to +85 -55 to +150 Unit V dBmW dBmW dBmW mW C C Note: Using continuously under heav...9 GHz, pRF_IN = -35 dBmW Measured at 1.9 GHz (Note 3) 15.0 -13.5 17.5 2.2 -7.5 22.0 3.0 dB dB dBmW...
Description 1.9 GHz Band RX Front-End IC

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    BFR193

Infineon Technologies AG
Part No. BFR193
OCR Text ...nfineon.com/silicondiscretes 4 Aug-09-2001 BFR193 Total power dissipation Ptot = f (TS ) 600 mW P tot 40...9 1.1 1 7 8V 5V 3V Ccb 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 6 fT 2V 5 4 1V 3 ...
Description NPN Silicon RF Transistor

File Size 78.91K  /  7 Page

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    CDQ6004-QS07 CDQ6004-QS PB-CDQ6004-QS-00A0 PB-CDQ6004-QS-00B0 PB-CDQ6004-QS-00C0

http://
Mimix Broadband
Part No. CDQ6004-QS07 CDQ6004-QS PB-CDQ6004-QS-00A0 PB-CDQ6004-QS-00B0 PB-CDQ6004-QS-00C0
OCR Text 4.0 GHz Dual High Dynamic Range Amplifier August 2007 - Rev 11-Aug-07 CDQ6004-QS Features Matched Pair of Amplifiers for Optimum Bal...9 16.5 -13 -16 42 2.1 +23 Typical 2 15 -11 -12 41 2.1 +23 2.4 14.9 -20 -11 40.5 2.6 +24 Units...
Description 0.05-4.0 GHz Dual High Dynamic Range Amplifier

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    HWL23NPB

Hexawave, Inc
Part No. HWL23NPB
OCR Text ...dBm) 22 20 40 18 16 10 14 1 2 3 4 5 6 0 Vds (V) 30 20 Po PAE PAE (%) 60 50 Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=55mA Po (dB...9 1.0 1.1 0 f (GHz) 30 20 PAE (%) 60 50 Po Gain PAE Output Power & Efficiency & Gain vs Freque...
Description L-Band GaAS Power FET

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    HWL26NPB

Hexawave, Inc
Part No. HWL26NPB
OCR Text ... (dBm) 30 25 20 15 10 5 0 1 2 3 4 5 6 PAE (%) 60 50 40 30 20 10 0 Vds (V) Po PAE Output Power & Efficiency vs Vds @ f=1.9GHz,Ids=110mA P...9 10 11 12 13 14 20 10 0 Pin (dBm) PAE (%) 60 50 40 Po Gain Eff Hexawave Inc. 2 Prosperity Road I...
Description L-Band GaAs Power FET

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    Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
Part No. FMPA215107 FMPA2151
OCR Text 4?.5ghz and 4.9?.9ghz dual band linear power ampli?r module f ebruary 2007 fmpa2151 2.4?.5ghz and 4.9?.9ghz dual band linear power ampli?r module features dual band operation in a single package design integrated bias bypa...
Description 2.4-2.5GHz and 4.9-5.9ghz Dual Band Linear Power Amplifier Module 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
2.4-2.5GHz and 4.95.9GHz Dual Band Linear Power Amplifier Module

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