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31.949 Datasheet PDF File

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				California Eastern Labs
Part No.	NE6510179A NE6510179A-T1 NE6510179 NE6510179A-A NE6510179A-T1-A
OCR Text	... % A A V C/W V 12 -2.0 5 50 MIN 31.5 TYP 32.5 10.0 58 0.72 2.4 -0.4 8 VDS = 2.5 V; VGS = 0 V VDS = 2.5 V; ID = 14 mA Channel to Case IGD = 1...949 0.949 0.949 0.949 0.950 0.949 0.949 0.949 0.949 0.949 0.951 0.950 ANG 179.67 177.71 175.93 174.3...
Description	NECs 3W, L&S-BAND MEDIUM POWER GaAs HJ-FET
File Size	238.22K / 10 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC[ETC]
Part No.	B12V10514 B12V10592 B12V10535 B12V105 B12V10500 B12V10502
OCR Text	...3981 0.3870 0.3801 Mag -14 -25 -31 -36 -38 -40 -48 -46 -50 -52 -58 -60 -62 -67 -70 -75 -79 -83 -86 -88 -99 Ang 21.6 20.4 18.9 17.2 16.2 15.6 14.3 13.4 12.4 12.0 11.6 10.6 10.3 9.6 9.0 8.7 8.2 8.0 7.2 6.8 6.7 S11 S21 S12 S22 PAGE 4 BIP...
Description	NPN LOW NOISE SILICON MICROWAVE TRANSISTOR
File Size	37.71K / 8 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE5520279A-T1 NE5520279A
OCR Text	...8 - 36.6 - 36.0 - 34.6 - 32.7 - 31.4 - 27.2 - 22.0 - 5.2 - 1.3 27.2 56.3 79.5 86.6 MAG 0.830 0.833 0.840 0.849 0.851 0.856 0.861 0.869 0.876 0.882 0.894 0.898 0.903 0.907 0.914 0.921 0.925 0.926 0.930 0.937 0.942 0.941 0.942 0.947 0.952 0.9...
Description	NECS 3.2 V 2 W L&S BAND MEDIUM POWER SILICON LD-MOSFET NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET
File Size	163.74K / 7 Page	View it Online	Download Datasheet

				NEC[NEC] ETC
Part No.	NE6501077
OCR Text	...z, Vds = 10 V Ids 1.0 A, Pin = 31.0 dBm Rg = 100 Pin 23 dBm() add GL The other are the same as the above conditions. 2 NE...949 3.794 3.049 2.561 2.220 1.969 1.751 1.582 1.460 1.349 1.264 1.179 1.124 1.060 1.007 0.964 0.934 ...
Description	10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
File Size	36.45K / 6 Page	View it Online	Download Datasheet

				EXAR[Exar Corporation]
Part No.	XR16L784IV XR16L784CV XR16L784 XR16L78464-TQFP
OCR Text	...0 21 22 23 24 25 26 27 28 29 30 31 32 X T A L2 X T A L1 GND VCC TX0 DTR0# R T S 0# R I0 # CD0# DSR0# C T S 0# RX0 IN T # CS# A0 A1 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 TX1 DTR1# RTS1# RI1# CD1# DSR1# CTS1# RX1 TX2 DTR2# ...
Description	HIGH PERFORMANCE 2.97V TO 5.5V QUAD UART
File Size	292.79K / 52 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text	...8 83.9 80.2 76.1 67.3 57.4 45.8 31.5 23.5 13.6 -26.8 -152.8 -179.6 164.3 158.7 151.2 139.2 126.7 113.4 98.5 91.0 81.8 63.6 45.2 27.2 12.6 3.8 -4.1 -19.2 -34.5 MAG 17.977 6.354 3.391 2.382 1.869 1.473 1.335 1.272 1.264 1.269 1.267 1.265 1.25...
Description	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
File Size	47.52K / 8 Page	View it Online	Download Datasheet

				http:// DYNEX[Dynex Semiconductor] Dynex Semiconductor Ltd.
Part No.	DIM200MHS17-A000
OCR Text	...74.0453 i (ms) 0.0064351 1.3234 31.1756 0.01 0.1 Pulse width, tp - (s) 1 4 27.0126 176.9288 76.4438 97.9395 100 IGBT Diode 1 0.001 ...949) 733-3005. Fax: (949) 733-2986. These offices are supported by Representatives and Distributo...
Description	Half Bridge IGBT Module
File Size	146.53K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. Philips Semiconductors
Part No.	EFD25-3F3 EFD25-3F4 EFD25 EFD25-3C90 EFD25-3C85 EFD25-3C30
OCR Text	...and B.V., EINDHOVEN, NL, Tel. (+31 40) 2783 749, Fax. (+31 40) 2788 399. Brazil: Philips Components, SAO PAULO, Tel. (011) 821 2333, Fax. (0...949. Finland: Philips Components, ESPOO, Tel. (0) 9 615 800, Fax. (0) 9 615 80510. France: Philips C...
Description	EFD cores and accessories EFD的内核及配件 From old datasheet system
File Size	64.43K / 6 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL21E010MK
OCR Text	... 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 10 12 14 16 18 20 22 24 26 28 30 Input Pow er [dBm ] Pout Drain Efficiency 80 70 60 ...949 170.8 0.609 -35.5 0.014 70.5 0.930 173.5 3 FLL21E010MK High Voltage - High Power GaAs FET...
Description	High Voltage - High Power GaAs FET
File Size	304.62K / 6 Page	View it Online	Download Datasheet

				Eudyna Devices Inc
Part No.	FLL21E060IY
OCR Text	... -33 15.5 26 -35 1.5 Max. -0.5 -31 1.7 Unit V V dBc dB % o Channel to Case dBc C/W ESD Note : Based on EIAJ ED-4701 C-111A(C=...949 -176.61 0.512 -10.30 0.005 75.49 0.932 -176.11 0.943 -177.14 0.571 -16.29 0.005 71.35 0.928 -177...
Description	S BAND, GaAs, N-CHANNEL, RF POWER, JFET L,S-band High Power GaAs FET
File Size	306.31K / 6 Page	View it Online	Download Datasheet

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