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  300v 70a pdp igbt package to-2 Datasheet PDF File

For 300v 70a pdp igbt package to-2 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

    FGH20N60SFD FGH20N60SFDTU

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Fairchild Semiconductor, Corp.
List of Unclassifed Manufacturers
Part No. FGH20N60SFD FGH20N60SFDTU
Description 600V, 20A Field Stop igbt
40 A, 600 V, N-CHANNEL igbt, to-247AB ROHS COMPLIANT package-3
High current capability, High input impedance

File Size 789.56K  /  9 Page

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    IRGP20B60PD

IRF[International Rectifier]
Part No. IRGP20B60PD
Description INSULATED GATE BIPOLAR TRANSISTOR
WARP2 SERIES igbt WITH ULTRAFAST SOFT RECOVERY DIODE
600V Warp2 150kHz Copack igbt in a to-247AC package

File Size 734.09K  /  10 Page

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    IRF[International Rectifier]
Part No. IRG4BC40WS IRG4BC40WL
Description 600V Warp 60-150 kHz Discrete igbt in a to-262 package
600V Warp 60-150 kHz Discrete igbt in a D2Pak package
INSULATED GATE BIPOLAR TRANSISTOR

File Size 341.67K  /  10 Page

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    OM100Q05CB OM100Q80XX OM100Q05DB OM100Q05RB OM100Q05XX OM100Q10CB OM100Q10DB OM100Q10RB OM100Q10XX OM100Q15CB OM100Q15DB

International Rectifier
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
http://
Part No. OM100Q05CB OM100Q80XX OM100Q05DB OM100Q05RB OM100Q05XX OM100Q10CB OM100Q10DB OM100Q10RB OM100Q10XX OM100Q15CB OM100Q15DB OM100Q15RB OM100Q15XX OM100Q20CB OM100Q20DB OM100Q20RB OM100Q20XX OM100Q30CB OM100Q30DB OM100Q30RB OM100Q30XX OM100Q40CB OM100Q40DB OM100Q40RB OM100Q40XX OM100Q50CB OM100Q50DB OM100Q50RB OM100Q50XX OM100Q60CB OM100Q60DB OM100Q60RB OM100Q60XX OM100Q70CB OM100Q70DB OM100Q70RB OM100Q70XX OM100Q80CB OM100Q80DB OM100Q80RB
Description 50 A, SILICON, RECTIFIER DIODE
600V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
300v 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
700V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
500V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
400V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
200V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
150V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
800V 100A Hi-Rel Ultra-Fast Common Cathode Diode in a PB-3A package
100 AMP ULTRA FAST CENTER-TAP IN HERMETIC ISOLATED POWER BLOCK package

File Size 23.11K  /  2 Page

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    Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH409 SFH409-1
Description From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300v
CAP MICA 43PF 300v SMD 砷化镓红外发射器

File Size 33.60K  /  4 Page

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    TC74HC123AF TC74HC123AFN TC74HC123AP HC123

Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
http://
Part No. TC74HC123AF TC74HC123AFN TC74HC123AP HC123
Description Bipolar Transistor; package/Case:TO-126; Current Rating:500mA; Voltage Rating:300v
DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR

File Size 487.15K  /  11 Page

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    AUIRGS4062D1 AUIRGSL4062D1 AUIRGB4062D1

International Rectifier
Part No. AUIRGS4062D1 AUIRGSL4062D1 AUIRGB4062D1
Description 600V Automotive UltraFast Copack Trench igbt in a D2-Pak package
600V Automotive UltraFast Copack Trench igbt in a to-262 package
600V Automotive UltraFast Copack Trench igbt in a to-220AB package

File Size 592.25K  /  15 Page

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    APT150GN120JDQ4

Microsemi, Corp.
Microsemi Corporation
Part No. APT150GN120JDQ4
Description Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency; package: ISOTOP&#174;; BV(CES) (V): 1200; IC (A): 99; 215 A, 1200 V, N-CHANNEL igbt
Thunderbolt igbt

File Size 193.19K  /  9 Page

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    APT50GT60BR APT50GT60SRG APT50GT60BRG

Microsemi Corporation
http://
Microsemi, Corp.
Part No. APT50GT60BR APT50GT60SRG APT50GT60BRG
Description Thunderbolt igbt
Insulated Gate Bipolar Transistor - NPT Standard Speed; package: to-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL igbt, to-247AD

File Size 139.24K  /  6 Page

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    APT46GA90JD40

Microsemi Corporation
Microsemi, Corp.
Part No. APT46GA90JD40
Description High Speed PT igbt
Insulated Gate Bipolar Transistor - Power MOS 8; package: ISOTOP&#174;; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL igbt

File Size 235.94K  /  9 Page

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For 300v 70a pdp igbt package to-2 Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |   

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