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  3-w ch Datasheet PDF File

For 3-w ch Found Datasheets File :: 27655    Search Time::3.875ms    
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    MC33161D MC33161DR2 MC33161P MC34161 MC34161D MC34161DR2 MC34161P MC33161

ONSEMI[ON Semiconductor]
Part No. MC33161D MC33161DR2 MC33161P MC34161 MC34161D MC34161DR2 MC34161P MC33161
OCR Text ... 1 SO-8 D SUFFIX CASE 751 1 x = 3 or 4 A = Assembly Location WL, L = Wafer Lot YY, Y = Year WW, W = Work Week 3x161 ALYW MC3x161P AWL YYWW 8 PIN CONNECTIONS Simplified Block Diagram (Positive Voltage Window Detector Application) VCC ...
Description Tag-it(TM) HF-I Plus Transponder Inlays CD 0-RFIDN -25 to 70 2-chANNEL POWER SUPPLY SUPPORT CKT, PDSO8
Tag-it(TM) HF-I Pro Standard Transponder Inlays CD 0-RFIDN -25 to 70
Tag-it(TM) HF-I Standard Transponder Inlays 24.2-mm Circular 0-RFIDN -25 to 70
Universal Voltage Monitors

File Size 364.39K  /  16 Page

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    RSS140N03

ROHM[Rohm]
Part No. RSS140N03
OCR Text 3) Small and Surface Mount Package (SOP8). External dimensions (Unit : mm) SOP8 (8) 5.00.2 (5) 6.00.3 3.90.15 Max.1.75 1.50.1...W C C 1 1 2 0.50.1 (1) (4) 0.20.1 1/3 RSS140N03 Transistor Thermal resistance (Ta=...
Description Switching (30V / 14A)
Switching (30V, 14A)
Switching (30V 14A)

File Size 59.14K  /  4 Page

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    TPC8102

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8102
OCR Text ...le pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) channel temperature Storage temperature ...W C/W Marking (Note 5) TPC8102 Type Note 1: Please use devices on condition that the cha...
Description TOSHIBA Field Effect Transistor Silicon P channel MOS Type (MOSVI)

File Size 469.72K  /  7 Page

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    TPC8106-H

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8106-H
OCR Text ...le pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) channel temperature Storage temperature ...W C/W Marking (Note 5) TPC8106 H Type Note 1: Please use devices on condition that the...
Description SILICON P chANNEL MOS TYPE

File Size 510.73K  /  7 Page

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    TPC8107

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8107
OCR Text ...le pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) channel temperature Storage temperature ...W 1.0 W Weight: 0.080 g (typ.) 219 -13 0.19 150 -55 to 150 mJ A mJ C C Circuit Con...
Description Field Effect Transistor Silicon P channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P channel MOS Type (U-MOSIII)

File Size 215.18K  /  7 Page

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    TPC8108

TOSHIBA[Toshiba Semiconductor]
Part No. TPC8108
OCR Text ...le pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) channel temperature Storage temperature ...W 1.0 W Weight: 0.080 g (typ.) 157 -11 0.19 150 -55 to 150 mJ A mJ C C Circuit Con...
Description Silicon P channel MOS Type (U-MOSIII)

File Size 340.81K  /  7 Page

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